1. High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film.
- Author
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Cheng, Yang, Li, Mingkai, Wang, Qile, Zhang, Teng, Meng, Dongxue, Lu, Yinmei, and He, Yunbin
- Subjects
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PULSED laser deposition , *TERNARY alloys , *DETECTORS , *SOLAR ultraviolet radiation , *COMPOUND semiconductors , *SOLAR spectra , *THIN films - Abstract
In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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