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Nano-engineering crystalline materials can be used to tailor their thermal properties. By adding new nanoscale phonon scattering centers and controlling their size, one can effectively decrease the phonon mean free path, hence the thermal conductivity of a fully crystalline material. In this Letter, we use the 3ω method in the temperature range of 100–300 K to experimentally report on the more than threefold reduction of the thermal conductivity of an epitaxially grown crystalline germanium thin film with embedded polydispersed crystalline Ge3Mn5 nano-inclusions with diameters ranging from 5 to 25 nm. A detailed analysis of the structure of the thin film coupled with Monte Carlo simulations of phonon transport highlights the role of the nano-inclusions volume fraction in the reduction of the phononic contribution to the thermal conductivity, in particular its temperature dependence, leading to a phonon mean free path that is set by geometrical constraints. [ABSTRACT FROM AUTHOR]

The authors study the thermal conductivity of silicon nanowires by simulation of phonon motion and interactions through a dedicated Monte Carlo model. This model solves the Boltzmann transport equation, taking into account silicon acoustic mode dispersion curves and three phonon interactions (the normal and umklapp processes). The confinement, which limits the thermal conductivity in such structures, is described by diffuse reflection at lateral boundaries of the nanowire without any adjustment by a boundary collision time, which depends on a specularity factor. They compare simulation results to experimental measurements on similar nanostructures. A good agreement is achieved for almost all the considered diameters. [ABSTRACT FROM AUTHOR]

This paper studies thermal transport in nanoporous silicon with a significant specific surface area. First, the equilibrium molecular dynamics approach was used to obtain the dependence of thermal conductivity on a specific surface area. Then, a modified phonon transport kinetic theory-based approach was developed to analyze thermal conductivity. Two models were used to evaluate the phonon mean free path in the porous materials. The first model assumes that the dependence of the mean free path only relies on the specific surface area, and the second one also considers the mean free path variation with the porosity. Both approaches approximate molecular dynamics data well for the smaller porosity values. However, the first model fails for highly porous matrixes, while the second one matches well with molecular dynamics simulations across all considered ranges of the porosities. This work illustrates that the phonon mean free path dependence with the porosity/volume fraction of composite materials is essential for describing thermal transport in systems with significant surface-to-volume ratio. [ABSTRACT FROM AUTHOR]

The thermal transport properties of porous silicon and nano-hybrid "porous silicon/water" systems are presented here. The thermal conductivity was evaluated using the equilibrium molecular dynamics technique for porous systems made of spherical voids or water-filled cavities. We revealed large thermal conductivity enhancement in the nano-hybrid systems as compared to their dry porous counterparts, which cannot be captured by effective media theory. This rise of thermal conductivity is related to the increase in the specific surface area of the liquid/solid interface. We demonstrated that the significant difference, more than two folds, in thermal conductivity of pristine porous silicon and "porous silicon liquid–composite" is due to the liquid density fluctuation close to the "solid–liquid interface" (layering effect). This effect is getting more importance for the large specific surface of the interfacial area. Specifically, the enhancement of the effective thermal conductivity is 50% for a specific surface area of 0.3 (1/nm), and it increases further upon the increase in the surface to volume ratio. Our study provides valuable insights into the thermal properties of hybrid liquid/solid nanocomposites and into the importance of confined liquids within nanoporous materials. [ABSTRACT FROM AUTHOR]

Heat transport in bulk semiconductors is well understood, and during the last few years, it has been shown that it can be computed accurately from ab initio calculations. However, describing heat transport in micro- and nanodevices used in applications remains challenging. In this paper, we propose a method, based on the propagation of wave packets, for solving the phonon Boltzmann transport equation parametrized with ab initio calculations. It allows computing the thermal conductivity of micro- and nano-sized systems, without adjustable parameters, and for any materials. The accuracy and applicability of the method are demonstrated by computing the cross plane thermal conductivity of cubic and hexagonal silicon thin films as a function of their thickness. [ABSTRACT FROM AUTHOR]

Evidence for an excellent compromise between structural stability and low thermal conductivity has been achieved with tilted Bi2Te3 nanowires. The latter ones were recently fabricated and there is a need in modeling and characterization. The structural stability and the thermal conductivity of Bi2Te3 nanowires along the tilted [015]* direction and along the [010] direction have been explored. For the two configurations of nanowires, the effect of the length and the cross section on the thermal conductivity is discussed. The thermal conductivity of infinite size tilted nanowire is 0.34W/m K, significantly reduced compared to nanowire along the [010] direction (0.59W/m K). This reveals that in Bi2Te3 nanowires the structural anisotropy can be as important as size effects to reduce the thermal conductivity. The main reason is the reduction of the phonon mean free path which is found to be 1.7 nm in the tilted nanowires, compared to 5.3nm for the nanowires along the [010] direction. The fact that tilted Bi2Te3 nanowire is mechanically stable and it has extremely low thermal conductivity suggests these nanowires as a promising material for future thermoelectric generation application. [ABSTRACT FROM AUTHOR]