1. Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam.
- Author
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Chen, Z. Q., Maekawa, M., Kawasuso, A., Suzuki, R., and Ohdaira, T.
- Subjects
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ZINC crystals , *POSITRON beams , *POSITRON annihilation , *PARTICLE beams , *PARTICLES (Nuclear physics) , *ANNIHILATION reactions , *ELECTRONS , *POSITRONS - Abstract
ZnO crystals were implanted with N+, O+, and Al+, and co-implanted with O+/N+ and Al+/N+ ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N+-implanted and Al+/N+ co-implanted samples, these vacancy clusters are only partially annealed at 800 °C, as compared with their entire recovery in the O+- and Al+-implanted samples at 800–900 °C, suggesting a strong interaction between nitrogen and vacancy clusters. However, in the O+/N+ co-implanted sample, most vacancy clusters disappear at 800 °C. Probably oxygen scavenges nitrogen to enhance the annealing of the vacancy clusters. Upon further annealing at 1000–1100 °C, nitrogen also forms stable complexes with thermally generated vacancies. These nitrogen-related vacancy complexes need high-temperature annealing at 1200–1250 °C to be fully removed. [ABSTRACT FROM AUTHOR]
- Published
- 2005
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