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Presents high-brightness blue and green light-emitting diodes (LED) based on II-VI heterostructures grown by molecular beam epitaxy on zinc selenide substrates. Components of the LED structure; Fabrication of mesa diode structure; Degradation of light output in II-VI laser diodes and LED.

We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO[sub 3]/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]