1. p-type conduction in unintentional carbon-doped ZnO thin films.
- Author
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Tan, S. T., Sun, X. W., Yu, Z. G., Wu, P., Lo, G. Q., and Kwong, D. L.
- Subjects
THIN films ,METAL organic chemical vapor deposition ,CHEMICAL vapor deposition ,ANNEALING of metals ,HEAT treatment of metals ,MASS spectrometry - Abstract
p-type conduction has been observed in unintentional carbon-doped ZnO thin films grown by metal organic chemical vapor deposition through postgrowth annealing treatment. The existence of carbon, which has been verified by secondary ion mass spectrometry and x-ray photoelectron spectroscopy, was predicted to immobilize the oxygen in the interstitial site in ZnO thin films after annealing. Using first principles calculations, the formation of carbon-oxygen cluster defect in ZnO was found to be favorable and acts as a shallow acceptor. The cryogenic photoluminescence of the p-type carbon-doped ZnO thin films shows an additional peak located at 3.3564 eV, which was attributed to the acceptor (carbon-oxygen cluster defect) bound exciton emission. [ABSTRACT FROM AUTHOR]
- Published
- 2007
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