1. Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures.
- Author
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Shen, Xiao, Zhang, En Xia, Zhang, Cher Xuan, Fleetwood, Daniel M., Schrimpf, Ronald D., Dhar, Sarit, Ryu, Sei-Hyung, and Pantelides, Sokrates T.
- Subjects
ATOMIC theory ,TEMPERATURE effect ,PLASMA instabilities ,SILICON compounds ,MOLECULAR structure ,ACTIVATION (Chemistry) ,FORCE & energy ,METAL oxide semiconductors ,CAPACITORS ,IONIZATION (Atomic physics) - Abstract
We find that atomic-scale mechanisms for bias-temperature instabilities (BTIs) in SiC/SiO
2 structures can differ significantly from those in Si/SiO2 structures. The measured effective-activation energies for BTI in 4H-SiC metal-oxide-semiconductor capacitors, 0.23±0.02 eV for p-type and 0.12±0.02 eV for n-type, are essentially identical to the respective dopant ionization energies, which are much larger than in Si. This suggests a key role for carrier release from deep dopants for BTI in SiC. In addition, asymmetric degradation is observed under switched-bias stress in p-type and n-type SiC, as a result of the reconfiguration of O vacancies in SiO2 layer after hole capture. [ABSTRACT FROM AUTHOR]- Published
- 2011
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