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Flexible graphene transistors built on a biocompatible Parylene C substrate would enable active circuitry to be integrated into flexible implantable biomedical devices. An annealing method to improve the performance of a flexible transistor without damaging the flexible substrate is also desirable. Here, we present a fabrication method of a flexible graphene transistor with a bottom-gate coplanar structure on a Parylene C substrate. Also, a current annealing method and its effect on the device performance have been studied. The localized heat generated by the current annealing method improves the drain current, which is attributed to the decreased contact resistance between graphene and S/D electrodes. A maximum current annealing power in the Parylene C-based graphene transistor has been extracted to provide a guideline for an appropriate current annealing. The fabricated flexible graphene transistor shows a field-effect mobility, maximum transconductance, and a Ion/Ioff ratio of 533.5 cm2/V s, 58.1 μS, and 1.76, respectively. The low temperature process and the current annealing method presented here would be useful to fabricate two-dimensional materials-based flexible electronics.

Nickel silicides are widely used as contact materials for electronic devices based on silicon (Si). However, they have been predominantly fabricated by annealing separate Ni and Si phases which leads to phase and structural complexity. In this letter, direct epitaxial growth of a single-phase nickel disilicide (NiSi2) thin film by sputter deposition of NiSi2 is achieved on low-cost and flexible Hastelloy tapes which offers a promising route to fabricate low-cost, flexible electronic devices. Biaxially textured titanium nitride (TiN) is applied as the seeding layer and the diffusion barrier under NiSi2. An epitaxial relationship of (001)⟨100⟩NiSi2 ǁ (001)⟨110⟩TiN is observed with an extra-large lattice mismatch (∼10.3%) between NiSi2 and TiN. Both the bonding similarity and the passivation effect by hydrogen promote the epitaxial growth of NiSi2 on TiN. The flat and smooth NiSi2 thin film consists of grains with a size of 50–100 nm. An epitaxially grown Si film on NiSi2 further demonstrates the potential of manufacturing high-performance Si flexible electronics with NiSi2/TiN/Hastelloy as the direct contact through this approach.

Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices. Many elemental and compound liquid semiconductors exist, although the lowest melting point is observed for Se at 221 °C. Recently, reports of liquid Se-S systems have shown betavoltaic and alphavoltaic power generation as a liquid with a reduced melting point of 105 °C. Here, we show the ability to depress the melting point to 57 °C by using equal atomic fractions of selenium and iodine while maintaining semiconducting behavior. A heterojunction structure using ITO and n-GaN as the contacts was selected based on chemical compatibility and predicted band lineups. Electrical and optical measurements were used to deduce the electronic and transport properties of the mixture.

We demonstrate a robust flexible tactile actuator that is capable of working under high external pressures. The tactile actuator is based on a pyramidal microstructured dielectric elastomer layer inducing variation in both mechanical and dielectric properties. The vibrational performance of the actuator can be modulated by changing the geometric parameter of the microstructures. We evaluated the performance of the actuator under high-pressure loads up to 25 kPa, which is over the typical range of pressure applied when humans touch or manipulate objects. Due to the benefit of nonlinearity of the pyramidal structure, the actuator could maintain high mechanical output under various external pressures in the frequency range of 100–200 Hz, which is the most sensitive to vibration acceleration for human finger pads. The responses are not only fast, reversible, and highly durable under consecutive cyclic operations, but also large enough to impart perceivable vibrations for haptic feedback on practical wearable ...

Electroadhesion is a promising adhesion mechanism for robotics and material handling applications due to several distinctive advantages it has over existing technologies. These advantages include enhanced adaptability, gentle/flexible handling, reduced complexity, and ultralow\ud energy consumption. Unstable electroadhesive forces, however, can arise in ambient environments. Electroadhesive devices that can produce stable forces in changing environments are thus desirable. In this study, a flexible and environmentally stable electroadhesive device was designed and manufactured by conformally coating a layer of barium titanate dielectric on a chemically etched thin copper laminate. The results, obtained from an advanced electroadhesive “normal force” testing platform, show that only a relative difference of 5.94% in the normal force direction was observed. This was achieved when the relative humidity changed from 25% to 53%, temperature from 13.7 �C to 32.8 �C, and atmospheric pressure from 999 hPa to 1016.9 hPa. This environmentally stable electroadhesive device may promote the application of the electroadhesion technology.

A spiral interconnect array is a commonly used architecture for stretchable electronics, which accommodates large deformations during stretching. Here, we show the effect of different geometrical morphologies on the deformation behavior of the spiral island network. We use numerical modeling to calculate the stresses and strains in the spiral interconnects under the prescribed displacement of 1000 μm. Our result shows that spiral arm elongation depends on the angular position of that particular spiral in the array. We also introduce the concept of a unit-cell, which fairly replicates the deformation mechanism for full complex hexagon, diamond, and square shaped arrays. The spiral interconnects which are axially connected between displaced and fixed islands attain higher stretchability and thus experience the maximum deformations. We perform tensile testing of 3D printed replica and find that experimental observations corroborate with theoretical study.

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip...

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on freestanding plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V1 s 1 and 0.013 cm2 V1 s 1 , respectively, current on/off ratio in the range 102 –104 , and maximum operating voltages between 3.5 and 10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as 3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at 30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

We investigate metal layers with a thickness of only a few nanometers as anode replacement for indium tin oxide (ITO) in white organic light-emitting diodes (OLEDs). The ultrathin metal electrodes prove to be an excellent alternative that can, with regard to the angular dependence and efficiency of the OLED devices, outperform the ITO reference. Furthermore, unlike ITO, the thin composite metal electrodes are readily compatible with demanding architectures (e.g., top-emission or transparent OLEDs, device unit stacking, etc.) and flexible substrates. Here, we compare the sheet resistance of both types of electrodes on polyethylene terephthalate for different bending radii. The electrical performance of ITO breaks down at a radius of 10 mm, while the metal electrode remains intact even at radii smaller than 1 mm.

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm2/V s (average mobility is 0.12 cm2/V s) and on/off ratio is higher than 107. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.

In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly biodegradable, flexible, and high performance devices. Double-gate flexible Si NM TFTs built on a CNF substrate have shown an electron mobility of 160 cm2/V·s and fT and fmax of 4.9 GHz and 10.6 GHz, respectively. This demonstration proves the microwave frequency capability and, considering today's wide spread use of wireless devices, thus indicates the much wider utility of CNF substrates than that has been demonstrated before. The demonstration may also pave the way toward portable green devices that would generate less persistent waste and save more valuable resources.

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

Stretchable electronics typically integrate hard, functional materials on soft substrates. Here we report on engineered elastomeric substrates designed to host stretchable circuitry. Regions of a stiff material, patterned using photolithography, are embedded within a soft elastomer leaving a smooth surface. We present the associated design rules to produce stretchable circuits based on experimental as well as modeling data. We demonstrate our approach with thin-film electronic materials. The "customized" elastomeric substrates may also be used as a generic elastic substrate for stretchable circuits prepared with alternative technologies, such as transfer-printing of inorganic, thinned devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799653]

The transmittance of Ag-based electrode increased through suppressing surface plasmons (SPs) coupling. When 10-nm-thick Ag was deposited on small-dielectric-constant (e) film (LiF, SiO), SPs coupling was induced, resulting in low transmittance (

Flexible ferroelectric capacitors with doped polymer electrodes have been fabricated on plastic substrates with performance as good as metal electrodes. The effect of doping on the morphology of polymer electrodes and its impact on device performance have been studied. Improved fatigue characteristics using doped and undoped poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) electrodes versus metal electrodes are observed. It is shown that the polymer electrodes follow classical ferroelectric and dielectric responses, including series resistance effects. The improved device characteristics obtained using highly conducting doped PEDOT:PSS suggest that it may be used both as an electrode and as global interconnect for all-polymer transparent circuits on flexible substrates.

In this work, we characterize the electromagnetic properties of polydimethylsiloxane (PDMS) and use this as a free-standing substrate for the realization of flexible fishnet metamaterials at terahertz frequencies. Across the 0.2-2.5 THz band, the refractive index and absorption coefficient of PDMS are estimated as 1.55 and 0-22 cm -1, respectively. Electromagnetic modeling, multi-layer flexible electronics microfabrication, and terahertz time-domain spectroscopy are used in the design, fabrication, and characterization of the metamaterials, respectively. The properties of PDMS add a degree of freedom to terahertz metamaterials, with the potential for tuning by elastic deformation or integrated microfluidics. © 2012 American Institute of Physics.

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm2/V s, ON/OFF current ratios were 105, regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics.