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Self-assembled InAsSb quantum dots (QD) on (001) InP substrates have been grown using metalorganic vapor phase epitaxy. The dot density and size are found to be strongly dependent on the presence of arsine. Direct deposition of InSb on InP and GaSb substrates formed large islands of InSb with low density of less than 5×10[sup 9]/cm[sup 2], however, InAsSb QDs of density as high as 4×10[sup 10]/cm[sup 2] could be self-assembled by alternating group III and group V precursors, and high density almost pure InSb QDs were achieved on In[sub 0.53]Ga[sub 0.47]As/InP. The formation of high density InAsSb QDs is a result of a local nonequilibrium process and a reduction in mobility of In adatoms on the growth surface due to the presence of arsenic atoms, and in the case of high density almost pure InSb QDs on InGaAs/InP, the InAs interface layer is believed to be responsible. Photoluminescence shows that InSb QDs emit light at room temperature in the range of 1.7–2.2 μm. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 °C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm[sup 2]. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/°C is measured, which is even lower than that caused by the refractive index change. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]