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Pool boiling has been considered as an effective method for heat transfer, which is extensively used in semiconductor microprocessors and aerospace. The prevention of critical heat flux (CHF) and improvement of heat transfer coefficient (HTC) are the keys to strengthen the pool boiling heat transfer. It has been reported that porous pillars can delay CHF by reducing vapor–liquid counter flow and nano-porous structure can significantly improve the liquid replenishment capacity and HTC. Herein, we modulate micro-nano porous structures by etching nanostructures on the surface of microporous pillars in order to utilize the advantages of above two structures. The boiling phenomenon inside the micro-nano composite pores is clearly demonstrated based on our visualization experiment. It is observed that the main vapor motion is regular periodic growth and recession. Through the quantitative analysis of the vapor–liquid interface area and vapor movement frequency, we find that they are both positively correlated with the heat transfer performance of porous structures. Hence, it is proved that the vapor–liquid phase distribution is the decisive factor affecting the heat transfer performance of micro-nano porous structures. Following the principle of maintaining larger vapor–liquid interface area and accelerating vapor movement frequency, the micro-nano porous structures with better performance can be obtained. Our approach establishes the relationship between the internal boiling phenomenon and the performance of micro-nano porous structures. In addition, it also provides a feasible direction for improving the performance of engineered boiling micro-nano structures. [ABSTRACT FROM AUTHOR]

We present a design for a quantum photodetector operating in the terahertz range, at 3.45 THz (15 meV, 87 μm). Our device relies on biased GaAs/AlGaAs heterostructure, designed to exploit LO phonon scattering as an extraction mechanism. In our design, the external potential due to the applied bias forms an extraction miniband and allows accommodating an LO phonon transition (36 meV) and use it as an extraction mechanism, even though its energy exceeds the detector's absorbing transition at 15 meV. Spectral-resolved measurements performed on arrays of patch antenna microcavities reveal a peak photocurrent at the designed photon energy with a responsivity of 80 mA/W at 20 K. The maximum operating temperature of the photodetector is found to be 40 K. Detector characterizations were performed both with a black-body source as well as with a terahertz quantum cascade laser emitting at 3.5 THz. [ABSTRACT FROM AUTHOR]

Influence of the barrier layer on the electrical properties of V/Al-based Ohmic contact is investigated by comparing the surface morphology and alloying results of V/Al/Ni/Au (with barrier Ni) and V/Al/Cr/Au (with barrier Cr) contacts on n-AlGaN (Al molar fraction>60%) after 850 °C annealing. Due to the clustering of Ni during annealing, a thin Al layer (AlOx) and a number of Al-Au alloy clusters are formed at the contact interface of n-AlGaN, which increases the contact resistance of the V/Al/Ni/Au Ohmic contacts. In contrast, the annealed V/Al/Cr/Au electrodes cover the surface uniformly, which not only contributes to the increased contact area, but also suppresses the formation of high resistance products. Thanks to the Cr barrier layer, the specific contact resistivity of V/Al-based Ohmic contact is reduced by 26%. [ABSTRACT FROM AUTHOR]