1. Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction.
- Author
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Ma, Zhenyu, Zhang, Xin, Liu, Pu, Deng, Yong, Hu, Wenyu, Chen, Longqing, Zhu, Jun, Chen, Sen, Wang, Zhengshang, Shi, Yuechun, Ma, Jian, Wang, Xiaoyi, Qiu, Yang, Zhang, Kun, Cui, Xudong, and Walther, Thomas
- Subjects
COMPLEX ions ,ELECTRON energy loss spectroscopy ,BOND strengths ,ION beams ,CONDUCTION electrons ,CHEMICAL reactions ,METAL clusters - Abstract
The investigation of chemical reactions during ion irradiation is a frontier for the study of the ion–material interaction. In order to probe the chemistry of ion produced nanoclusters, valence electron energy loss spectroscopy (VEELS) was exploited to investigate Ga
+ ion damage in Al2 O3 , InP, and InGaAs, where each target material has been shown to react differently to the interaction between impinging ions, recoil atoms, and vacancies: metallic Ga, ternary InGaP clusters, and metallic In clusters are formed in Al2 O3 , InP, and InGaAs, respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonian calculations indicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rates and preferential bond formation due to differing bond strengths. [ABSTRACT FROM AUTHOR]- Published
- 2023
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