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Your search keyword '"Zhang, Xue‐Ao"' showing total 8 results
Start Over Author "Zhang, Xue‐Ao" Publication Year Range Last 10 years Journal applied physics letters
8 results on '"Zhang, Xue‐Ao"'

7. Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts.

Author

Zhu, Mengjian, Luo, Wei, Wu, Nannan, Zhang, Xue-ao, and Qin, Shiqiao

Subjects
BAND gaps, FIELD-effect transistors, ORGANIC semiconductors, MOLYBDENUM disulfide, GRAPHENE
Abstract

2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential for nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 is a critical step for realizing high performance devices. Here, we demonstrate Co/hBN tunnel contacts to few-layer MoTe2. In sharp contrast to the p-type conduction of Co contacted MoTe2, Co/hBN tunnel contacted MoTe2 devices show clear n-type transport properties. Our first principles calculation reveals that the inserted few-layer hBN strongly interacts with Co and significantly reduces its work-function by ∼1.2 eV, while MoTe2 itself has a much weaker influence on the work-function of Co. This allows us to build MoTe2 diodes using the mixed Co/hBN and Co contact architecture, which can be switched from p-n type to n-p type by changing the gate-voltage, paving the way for engineering multi-functional devices based on atomically thin 2D semiconductors. [ABSTRACT FROM AUTHOR]

Published
2018
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