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Owing to the intrinsically wide bandgap and high uniformity, amorphous Ga2O3 (a-Ga2O3) has been illustrating a great industrial potential for large-area deep ultraviolet (UV) photosensor arrays. However, a seemingly irreconcilable contradiction between high responsivity and long persistent photoconductivity has hampered the growing pace of such devices. In this work, three-terminal InGaZnO (IGZO)/a-Ga2O3 dual-active-layer (DAL) transistors were developed to realize the ability of a-Ga2O3 as the active layer both in switching and sensing. Benefitting from the introduction of ultrathin IGZO electron reservoir and defect control of a-Ga2O3, the DAL device demonstrates more stable and superior gate-control capability with promising performance including high on/off ratio and field-effect mobility of ∼108 and 8.3 cm2/V⋅s, respectively, as well as a small sub-threshold swing (SS) of 0.36 V/dec. Under 254 nm UV illumination, the DAL device manifests a light-to-dark ratio of ∼108, a responsivity of 4.8 × 103 A W−1, a detectivity of 8 × 1015 Jones, and a UV/visible rejection ratio (R254/R400) of 64. The simultaneous achievement of deep UV photo-detection and transistor's switching performance in a-Ga2O3 material offers excellent potential for the construction of large-area active-matrix UV photosensor arrays with the simple and low-cost fabrication process. [ABSTRACT FROM AUTHOR]