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Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations, a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions, this matches the expectations. For multi-Te configurations, the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon. [ABSTRACT FROM AUTHOR]

Pulsed photoionization of laser-cooled atoms in a magneto-optical trap (MOT) has the potential to create cold electron beams of few meV bandwidths and few ps pulse lengths. Such a source would be highly attractive for the study of fast low-energy processes like coherent phonon excitation. To study the suitability of MOT-based sources for the production of simultaneously cold and fast electrons, we study the photoionization dynamics of trapped Cs atoms. A momentum-microscope-like setup with a delay-line detector allows for the simultaneous measurement of spatial and temporal electron distributions. The measured patterns are complex, due to the Lorentz force inducing spiral trajectories. Ray-tracing simulations reproduce the main features. We find that the production of electron bunches with bandwidths of a few meV is straightforward; however, pulses in the ps-range are more demanding and require beam blanking or partial blocking. [ABSTRACT FROM AUTHOR]

The article offers information on a study conducted by the authors on transfer of angular momentum in optical near-fields of optical antennas. Topics discussed include deviation of geometrical antenna from photoemission yield, confinement of near-field to antenna arms with reduced polarization, increased circular polarization in the center of antenna, and momentum transfer by transfer of spin polarized electrons.

The spin dependent valence band structure of the Heusler compound Co2MnGa grown on MgO(100) is investigated by spin resolved ultraviolet photoemission spectroscopy (SRUPS). Using a vacuum suitcase, epitaxial thin film samples are transferred from a deposition chamber into an SRUPS chamber with a highly efficient spin detector. The transport results only in weak oxidation of the moderately reactive compound Co2MnGa. A spin polarization of 34% is obtained at the Fermi energy. The energy dependence of the spin polarization including a sign change at E-EF=-0.6 eV is in good agreement with theoretical predictions of the bulk properties of the Heusler compound. [ABSTRACT FROM AUTHOR]