1. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium.
- Author
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Dominici, Stefano, Hanqing Wen, Bertazzi, Francesco, Goano, Michele, and Bellotti, Enrico
- Subjects
ELECTRON-hole recombination ,GERMANIUM ,PHOTONICS ,GREEN'S functions ,CARRIER density - Abstract
The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T=300K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phononassisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 1016 cm
-3 to 5×1019 cm-3 . For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density. [ABSTRACT FROM AUTHOR]- Published
- 2016
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