1. High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors.
- Author
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Betz, A. C., Barraud, S., Wilmart, Q., Plaçais, B., Jehl, X., Sanquer, M., and Gonzalez-Zalba, M. F.
- Subjects
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SILICON-on-insulator technology , *MICROWAVE transistors , *ELECTRIC admittance , *QUANTIZATION (Physics) , *ELECTRIC capacity , *QUANTUM capacitance - Abstract
We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature [ABSTRACT FROM AUTHOR]
- Published
- 2014
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