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This work investigates the influence of a supercritical fluid (SCF) treatment on the characteristics of resistive random access memory. A comparison between the experimental results for the device at initial, after the overset process, and after the SCF treatment, shows that the treatment dopes oxygen ions and generates defects in the switching region (SR). Moreover, the changes in the ratio of the components of the SR after the SCF treatment improve memory characteristics, including a lower set/reset voltage (VSET/VRESET), and higher resistances at low resistance state and high resistance state.

This work investigates the effect of X-ray accelerating voltage (Vacc) on the structural repair of HfZrOx ferroelectric random-access memory. We found that X-rays are able to break the molecular bonds due to missing electrons, thereby repairing the material structure. To further understand the influence of X-ray Vaccon structural repair, we conducted different Vaccconditions, with results showing that there is only a small improvement under high Vacc. However, the improvement is much clearer under low Vacc. To illuminate these results, we propose a physical model which is based on different X-ray energies that will have different energy penetration capacities.

In this work, Ag-doped HfO2-based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO2as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament.

In this work, capacitance-voltage (C-V) measurement and analysis were performed on silicon (Si)-based devices at low temperature (77 K). By this method, the C-Vcurves were compared for two devices with channel materials of Si and silicon-germanium (SiGe). The lattice mismatch of SiGe results in more defects at the interface between the channel and the gate insulator layer, which cause abnormal C-Vproperties. Through comprehensive theoretical calculation, proved by Silvaco simulation, an energy band diagram and physical model are proposed. Furthermore, the distribution of donor-like states can be examined, which can assist in monitoring the interface quality.

HfO2-based 1T1R is researched in this paper. The on-off ratio is an important electrical characteristic of RRAM, with a larger on-off ratio being preferable. However, temperature also affects the set process when operating RRAM. This study finds that the set process has different sensitivities to temperature at different high resistance states (HRSs). The set voltage of the higher HRS decreases with increasing temperature, while in the lower HRS, set voltage is independent of temperature. From the result, the lower HRS is better for RRAM because it is stable at different temperatures.