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The influence of quantum transport effects in ultrashort-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) was investigated using a Wigner Monte Carlo method, in which both quantum transport and carrier scattering effects can be fully incorporated. It was found that source-drain (SD) direct tunneling becomes evident for channel lengths of less than about 20 nm. Since this critical channel length is approximately three times larger than that in Si-MOSFETs, countermeasures should be taken to suppress SD direct tunneling in order to aggressively downscale III-V channel MOSFETs. In contrast, quantum reflection effects were found to have a negligible influence on the on-state drain current.

The influence of quantum transport effects in ultrashort-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) was investigated using a Wigner Monte Carlo method, in which both quantum transport and carrier scattering effects can be fully incorporated. It was found that source-drain (SD) direct tunneling becomes evident for channel lengths of less than about 20 nm. Since this critical channel length is approximately three times larger than that in Si-MOSFETs, countermeasures should be taken to suppress SD direct tunneling in order to aggressively downscale III-V channel MOSFETs. In contrast, quantum reflection effects were found to have a negligible influence on the on-state drain current.

A junctionless (JL) transistor has no pn junctions and has a number of advantages to fabricate ultrashort-channel metal-oxide-semiconductor field-effect transistors. In this paper, we study the electron transport in JL transistors based on a Monte Carlo simulation. We demonstrate that high channel doping will not degrade the drive current seriously, because ionized impurities scatter electrons mostly forward, and thus there is less chance for scattered electrons to return back to the source. We also find that smaller parasitic resistance in the source of a JL transistor also contributes to achieve high drive current.

The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III-V channel metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron-electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III-V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics.

The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III-V channel metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron-electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III-V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics.