1. Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE
- Author
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Kazuto Hirai, Tsunenobu Kimoto, Mitsuaki Kaneko, and Jun Suda
- Subjects
010302 applied physics ,Materials science ,Reflection high-energy electron diffraction ,business.industry ,General Engineering ,General Physics and Astronomy ,02 engineering and technology ,Substrate (electronics) ,Nitride ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,chemistry.chemical_compound ,Electron diffraction ,chemistry ,0103 physical sciences ,Silicon carbide ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) ,Wetting layer - Abstract
An alternative source supply sequence was applied to aluminum nitride (AlN) growth by rf-plasma-assisted molecular-beam epitaxy on silicon carbide (SiC) substrates with a high-quality AlN template layer. Under a nitrogen-only source supply after aluminum source supply, multi-cycle oscillations of reflection high-energy electron diffraction (RHEED) intensity were observed, which were due to layer-by-layer growth of the AlN layer. The RHEED oscillation under nitrogen-only supply indicates that excess aluminum exists on the surface as a few-monolayer-thick wetting layer along with microdroplets. By repeating the sequence, a 105 nm thick high-quality AlN layer was coherently grown on a SiC substrate without aluminum droplets.
- Published
- 2020
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