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Your search keyword '"Chih-Cheng Shih"' showing total 6 results
Start Over Author "Chih-Cheng Shih" Journal applied physics express
6 results on '"Chih-Cheng Shih"'

1. Performance improvement after nitridation treatment in HfO2-based resistance random-access memory

Author

Pei-Yu Wu, Hao-Xuan Zheng, Xiaohua Ma, Tsung-Ming Tsai, Simon M. Sze, Hui-Chun Huang, Jen-Wei Huang, Yi-Ting Tseng, Ting-Chang Chang, Ming-Hui Wang, Chih-Cheng Shih, Yue Hao, and Wen-Chung Chen

Subjects
010302 applied physics, Random access memory, Materials science, business.industry, General Engineering, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Resistive random-access memory, chemistry, Reaction model, Resistive switching, 0103 physical sciences, Optoelectronics, Performance improvement, 0210 nano-technology, business, Tin, Voltage
Abstract

Nitrogen atoms were introduced into a Pt/HfO2/TiN resistance random-access memory (RRAM) device to improve the resistive switching characteristics induced by a high-pressure nitridation treatment. Compared with a similar untreated HfO2 device, it exhibited superior performance, including a lower forming voltage, a higher on/off ratio, and high-endurance cycle operations. Current–voltage curve-fitting results confirmed the difference of the carrier transport mechanisms after the nitridation treatment. Finally, a reaction model was proposed to explain the improvement of RRAM switching due to the introduction of nitrogen atoms.

Published
2018
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2. Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory

Author

Ting-Chang Chang, Tian-Jian Chu, Jia-Ji Wu, Simon M. Sze, Kuan-Chang Chang, Hao-Xuan Zheng, Chih-Cheng Shih, Xiaoqin Du, Cheng-Hsien Wu, Chih-Hung Pan, Ting-Yang Chi, Tsung-Ming Tsai, and Po-Hsun Chen

Subjects
010302 applied physics, Inert, Materials science, business.industry, General Engineering, General Physics and Astronomy, Forming processes, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Resistive random-access memory, Mechanism (engineering), chemistry, 0103 physical sciences, Electrode, Optoelectronics, 0210 nano-technology, Tin, business, Layer (electronics), Polarity (mutual inductance)
Abstract

In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current–voltage (I–V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon.

Published
2017
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3. Complementary resistive switching behavior for conductive bridge random access memory

Author

Ikai Lo, Cheng-Hsien Wu, Kuan-Chang Chang, Chih-Cheng Shih, Kai-Huang Chen, Jin-Cheng Zheng, Ming-Hui Wang, Ting-Chang Chang, Rui Zhang, Simon M. Sze, Tsung-Ming Tsai, Yi-Ting Tseng, and Hao-Xuan Zheng

Subjects
010302 applied physics, Materials science, Programmable metallization cell, business.industry, General Engineering, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Bridge (interpersonal), chemistry, Resistive switching, 0103 physical sciences, Electrode, Optoelectronics, 0210 nano-technology, Tin, business, Layer (electronics), Electrical conductor, Voltage
Abstract

In this study, a structure of Pt/Cu18Si12O70/TiN has been investigated. By co-sputtering the Cu and SiO2 targets in the switching layer, we can measure the operation mechanism of complementary resistive switching (CRS). This differs from conventional conductive bridge random access memory (CBRAM) that tends to use Cu electrodes rather than Cu18Si12O70. By changing the voltage and compliance current, we can control device operating characteristics. Because Cu distributes differently in the device depending on this setting, the operating end can be located at either the top or bottom electrode. Device current–voltage (I–V) curves are used to demonstrate that the CRS in the CBRAM device is a double-electrode operation.

Published
2016
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4. Performance improvement after nitridation treatment in HfO2-based resistance random-access memory.

Author

Ming-Hui Wang, Ting-Chang Chang, Chih-Cheng Shih, Yi-Ting Tseng, Tsung-Ming Tsai, Hao-Xuan Zheng, Pei-Yu Wu, Hui-Chun Huang, Wen-Chung Chen, Jen-Wei Huang, Xiao-Hua Ma, Yue Hao, and Simon M. Sze

Abstract

Nitrogen atoms were introduced into a Pt/HfO2/TiN resistance random-access memory (RRAM) device to improve the resistive switching characteristics induced by a high-pressure nitridation treatment. Compared with a similar untreated HfO2 device, it exhibited superior performance, including a lower forming voltage, a higher on/off ratio, and high-endurance cycle operations. Current–voltage curve-fitting results confirmed the difference of the carrier transport mechanisms after the nitridation treatment. Finally, a reaction model was proposed to explain the improvement of RRAM switching due to the introduction of nitrogen atoms. [ABSTRACT FROM AUTHOR]

Published
2018
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5. Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory.

Author

Cheng-Hsien Wu, Chih-Hung Pan, Po-Hsun Chen, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Chih-Cheng Shih, Ting-Yang Chi, Tian-Jian Chu, Jia-Ji Wu, Xiaoqin Du, Hao-Xuan Zheng, and Simon M. Sze

Abstract

In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current–voltage (I–V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
View/download PDF

6. Complementary resistive switching behavior for conductive bridge random access memory.

Author

Hao-Xuan Zheng, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Rui Zhang, Kai-Huang Chen, Ming-Hui Wang, Jin-Cheng Zheng, Ikai Lo, Cheng-Hsien Wu, Yi-Ting Tseng, and Simon M. Sze

Abstract

In this study, a structure of Pt/Cu18Si12O70/TiN has been investigated. By co-sputtering the Cu and SiO2 targets in the switching layer, we can measure the operation mechanism of complementary resistive switching (CRS). This differs from conventional conductive bridge random access memory (CBRAM) that tends to use Cu electrodes rather than Cu18Si12O70. By changing the voltage and compliance current, we can control device operating characteristics. Because Cu distributes differently in the device depending on this setting, the operating end can be located at either the top or bottom electrode. Device current–voltage (I–V) curves are used to demonstrate that the CRS in the CBRAM device is a double-electrode operation. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

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