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End-pumped by a single-stripe 805-nm diode laser, a maximum continuous-wave output power of 290 mW with slope efficiency of 42% and 90 mW with slope efficiency of 44% around 2 µm were achieved in a 1.6-mm-thickness, unprocessed 7.2 at.% Tm3+:BaGd2(MoO4)4 cleavage plate in a hemispherical and plano–plano cavities, respectively, when the absorbed pump power was 830 mW. The dependence of the polarization of output laser on the output coupler transmission was investigated. The influence of upconversion on the laser performance was analyzed. The results show that the unprocessed Tm3+:BaGd2(MoO4)4 cleavage plate is a promising 2-µm laser gain medium pumped by diode laser around 808 nm. [ABSTRACT FROM AUTHOR]

A 1.2 mm thick microchip cleaved from a 1.2 at.% Nd3+: BaGd2(MoO4)4 crystal was used as the laser gain medium directly. The laser cavity mirrors were coated on the microchip without cutting and polishing. In the 1.06 μm quasi-CW laser operation, the microchip was pumped by a Ti:sapphire laser with a duty cycle of 10%, the threshold is 10 mW, and the slope efficiency is 50%. In the CW laser operation pumped by a diode laser, the threshold and slope efficiency are 140 mW and 33%, respectively. The results demonstrate that the unprocessed surfaces of the cleaved microchip have good enough flatness and parallelism for laser operation. [ABSTRACT FROM AUTHOR]

An Er3+/Yb3+-codoped Li6Y(BO3)3 crystal was grown by the Czochralski method. The polarized absorption spectra and the fluorescence decay curve were recorded. The efficiency of energy transfer from Yb3+ to Er3+ ions was estimated. Quasi-continuous-wave output power of 325 mW at 1594 nm was realized under the absorbed pump power of 10.4 W in a hemispherical cavity. The absorbed pump threshold and slope efficiency of the laser are 6.0 W and 7.2%, respectively. [ABSTRACT FROM AUTHOR]