1. Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes
- Author
-
Chia-Jyi Liu, Cheng He Ruan, Yu Ju Chu, Yow-Jon Lin, and Fei Hung Lin
- Subjects
chemistry.chemical_classification ,Photocurrent ,Materials science ,Sulfide ,Passivation ,business.industry ,Sulfidation ,Thermionic emission ,General Chemistry ,Atmospheric temperature range ,chemistry.chemical_compound ,chemistry ,Optoelectronics ,General Materials Science ,CZTS ,business ,Diode - Abstract
The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained on the basis of the thermionic emission theory. Compared with the CZTS/Si diode without sulfide treatment, the CZTS/Si diode with sulfide treatment exhibits a better rectifying behavior. The enhanced device performance is mainly the result of the formation of Si–S bonds that serve to reduce the interfacial potential fluctuations. In order to obtain a greater understanding of the improved rectifying I–V characteristics, the photoresponse measurement is performed. The increased photocurrent density can be interpreted by the device rectifying performance and interface passivation.
- Published
- 2015