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Monoclinic vanadium dioxide (M-VO2) is a kind of typical thermal phase change materials, but its relatively high phase transition temperature (68 °C) and low solar modulation efficiency greatly hinder the applications as energy materials. In this work, well-crystalline M-VO2 were prepared by pulsed laser deposition (PLD) under the adjustable oxygen pressure range. By fine adjusting the low oxygen pressure (0.1–0.9 Pa), VO2 maintain the monoclinic crystal and excellent photoelectrical properties, even if oxygen deficiency and other defects exist. Results indicate that the phase-transition temperature (Tc) decreases with the decrease of oxygen pressures while the solar modulation efficiency (ΔTsol) increases with the decrease of oxygen pressures. Moreover, the M-VO2 thin films prepared with 0.3 Pa oxygen pressure showed the best photoelectric performance, in which the sheet resistance changes up to three orders of magnitude, the phase-transition temperature is 61 °C and the ΔTsol is as high as 8.3%. This work has demonstrated the role of moderate oxygen defects in optimizing the photoelectric properties of M-VO2, also provided a feasibility study on how to deposit pure M-VO2 by PLD.

(Zr47Cu44Al9)100−xSix (x = 0, 0.5, 1.5 and 2.5 at%) thin-film metallic glasses (TFMGs) were deposited at glass substrate by pulsed laser deposition. The influence of Si content and substrate temperature on the microstructure, optical and electrical properties was investigated. After adding Si in the Zr47Cu44Al9 system, the transmittance of the films enhances obviously, especially in the near-infrared region. The resistivity increases and becomes more sensitive to the temperature due to Si addition. With increasing substrate temperatures from room temperature to 430 °C, (Zr47Cu44Al9)98.5Si1.5 films display fully amorphous structure. Appropriate substrate temperature drastically decreases the resistivity of films without degrading the transmittance. (Zr47Cu44Al9)98.5Si1.5 TFMG deposited at 330 °C exhibits the visible transmittance of 49.38%, the infrared transmittance of 80.27% and the resistivity of 7.62 mΩ cm, which are useful properties for their potential applications in infrared technology with the high requirement of radiation resistance and corrosion resistance.