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The structural, optical, electrical and photoelectric properties of n-type CdS1−xSbx layers at varied Sb doping concentrations (x = 0, 0.2, 0.4 and 0.6 at.%) were studied. The melt quenching process was used to generate the bulk form, whereas the thin layers were formed using the thermal evaporation method. To fabricate the Al/n-(CdS:Sb)/p-Si/Pt solar cell, pure CdS and antimony-doped CdS layers of up to 200 nm thickness (n-type side) were deposited on a single-crystallized silicon glass substrate (2 mm) with the Miller's directions (1 0 0). The fabricated solar cells' dark and illuminated current density–voltage (J–V), the power–voltage (P–V) and the capacitance–voltage (C–V) characteristics were thoroughly studied. As well, the open-circuit voltage, the short-circuit current, the fill factor and the power conversion efficiency (PCE) for the studied solar cell were computed. When the antimony ratio is 0.6 at.%, the maximum power conversion efficiency is 30.56%, with the main parameters: Jsc = 26.27 mA/cm2, Voc = 0.84 V, and FF = 0.692. In the instance of using the manufactured devices as detectors, the responsivity and quantum efficiency in the spectrum range of (100–1000 nm) were determined.

The present framework is primarily concerned with the optical properties of As40Se60-xSnx thin films. The bulk form has been synthesized by the melt quenching technique. The thin films have been prepared by thermal evaporation technique. The XRD and the SEM techniques showed the non-crystalline nature of the prepared glasses. The refractive index n, energy gap, energy loss functions and other optical constants have been determined. The findings refer to increase of the refractive index of thin films with the increase of Sn content. The energy gap decreases to 1.4 eV with the increasing of Sn content for the investigated films. Further explanation of the physical characteristics of the investigated films made following the approach of chemical bond. Additionally, the optical dispersion dn/dλ, phase velocity vp and group velocity Ug have been discussed in detail.

This framework focuses fundamentally on sheet resistance, Rs, measurements for the As40S60−xSex thin films with [(0≤ x ≥60) at.%] for thickness of the film and heating rate of 1000 nm and 5 K/min, respectively. Then, we can adapt these measurements to study the thermal and electrical properties by which we can reduce the time and effort spent. The thermal and electrical analysis in this work appears in a new format without the need for a procedure to calculate the thermal measurements from bulk material of the studied sample. The same is true for electrical properties where electrical measurements need not be necessarily carried out. In this work, we will focus first on obtaining the sheet resistance, Rs of thin films whose surface thickness is equal to 1000 nm for chalcogenide As40S60−xSex thin films with [(0≤ x ≥60) at.%] at a heating rate of 5 K/min, in the temperature range from 300 to 435 K. This range was sufficient to highlight on two important regions in the sheet resistance curve and through the derivation of sheet resistance as a function of temperature, there was clear evidence of one crystallization region for the studied samples. Second, the thermal data we obtained were used to complete the thermal calculations and then the electrical calculations. The activation energies of crystallization were evaluated. The nucleation and growth order parameter n, and the dimension order parameter m, were also computed and discussed. The activation energy, Ec, and Avrami index, n, were obtained by analyzing the data via JMA methods. The results indicated that the transformation from amorphous to crystalline phases is a complex process that includes different mechanisms of nucleation and growth. The change of activation energy with volume of crystalline fraction was determined. The crystalline phases for the as-deposited and annealed films were identified using X-ray diffraction (XRD). The electrical results of the investigated sample appear in two types of conduction channels which contribute to two conduction mechanisms in the crystallized region. In the extended and hopping states regions, the activation energies ΔE, two pre-exponential factors $$\sigma_{0} ,$$ $$\sigma_{0}^{*}$$ and other parameters were computed.

Chalcogenide Se50Te20S30 thin film of different thickness was deposited using thermal evaporation technique. The thermogram of the chalcogenide bulk Se50Te20S30 was obtained using a differential scanning calorimetry (DSC) with heating rate of 7.5 K/min. The glass transition temperature T g, crystallization temperature T c and peak crystallization temperature T p were identified. The X-ray diffraction (XRD) examination indicates the amorphous nature of the as-deposited film and polycrystalline structure of the thermal annealed ones. The dark electrical resistivity (ρ) measurements were taken in temperature range (300–500 K) and thickness range (200–450 nm). Analysis of the electrical resistivity results revealed two types of conduction mechanisms: conduction due to extended states in the temperature range (T > T c) and variable range hopping in the temperature range (T

Chalcogenide Te40Se30S30 thin films of different thickness (100–450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.