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Er3+ clustering phenomenon in Ga–Ge–S chalcogenide system is studied using Raman spectroscopy. The Raman spectra from 10 to 500 cm−1 for glasses (100−y)[15Ga2S3–85GeS2]–yEr2S3 (y=0.08−5.00 mol. %) have been analyzed. To reveal the influence of the chemical composition on the glass structure the intensity of the peak corresponding to Ge–Ge (Ga–Ga) homopolar bonds has been examined. The peak intensity increase with Er2S3 concentration change in the region 0

Continuous copper structures were precipitated on microscope cover glasses by the laser-induced chemical liquid phase deposition (LCLD) method. The deposition of copper was realized from both CuSO4- and CuCl2-based electrolyte solutions. The surface morphology and the chemical composition of the deposits were analyzed with a scanning electron microscope and energy dispersive X-ray spectrometer (EDX). The dependence of the characteristics (width and resistance) of the copper deposits on the laser power, temperature and the salt precursor was examined. The observed strong influence of the solution temperature and the salt precursor on the deposits characteristics was explained by the specific chemical features of the Cu(II)→Cu(0) reduction process.