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We study experimentally the formation of refractive index voxels (volume elements) in photorefractive LiNbO3 and LiTaO3 crystals illuminated with high irradiance femtosecond laser pulses. We used 150 fs pulses at 800 nm wavelength (energy 6–50 nJ) tightly focused inside the crystals in a single shot regime. This resulted in a formation of a micrometer size region of elevated refractive index, which may be used as memory bits in information storage/retrieval application. The maximum refractive index change of 5×10−4 was recorded in undoped LiNbO3 at an average light intensity of ∼TW/cm2 that is close to the breakdown threshold. A simple setup for photorefractive recording and in situ monitoring of the refractive index changes has been proposed. [ABSTRACT FROM AUTHOR]

We have built a mode-locked Nd:YVO4 laser with a very long resonator which produces an average power of 50 W in 13-ps pulses at 1064 nm and was designed for applications in micro-machining, the deposition of optical thin films, and the growth of nano-clusters in the laser-ablated plumes. By operating the laser at very low mode-locking repetition rates (1.5 MHz, 2.6 MHz, and 4.1 MHz), high pulse power is available in a near diffraction limited beam, allowing focused intensities to exceed 1012 W/cm2 and permitting efficient evaporation of difficult materials such as Si. The high power also allows conversion into the second harmonic at 532 nm with an efficiency exceeding 80%. Measurements of the ablation mass in experiments with metals show a 30–100 times increase in the ablation rate compared to the conventional low-repetition-rate ns-range lasers. [ABSTRACT FROM AUTHOR]

We study experimentally the formation of refractive index voxels (volume elements) in photorefractive LiNbO3 and LiTaO3 crystals illuminated with high irradiance femtosecond laser pulses. We used 150 fs pulses at 800 nm wavelength (energy 6–50 nJ) tightly focused inside the crystals in a single shot regime. This resulted in a formation of a micrometer size region of elevated refractive index, which may be used as memory bits in information storage/retrieval application. The maximum refractive index change of 5×10−4 was recorded in undoped LiNbO3 at an average light intensity of ∼TW/cm2 that is close to the breakdown threshold. A simple setup for photorefractive recording and in situ monitoring of the refractive index changes has been proposed. [ABSTRACT FROM AUTHOR]