1. Porous-shaped n-CdZnO/p-Si heterojunctions for UV photodetectors.
- Author
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Rana, Vijay S., Rajput, Jeevitesh K., Pathak, Trilok K., and Purohit, L. P.
- Subjects
PHOTODETECTORS ,HETEROJUNCTIONS ,THIN films ,THERMIONIC emission ,SPIN coating ,DIFFRACTION patterns - Abstract
In this study, n-type Cd
y Zn1−y O (y = 0, 0.5, 1, 1.5 at%) thin films were deposited on p-Si and soda lime glass substrates using sol–gel spin coating technique. From the X-ray diffraction patterns, it was observed that all thin films had wurtzite structure with (002) orientation. Scanning electron micrograph results revealed that the morphology varied with higher Cd doping in ZnO. The bandgap was decreased from 3.29 eV (undoped ZnO) to 3.26 eV (y = 1.5 at%) as Cd content increased. The electronic parameters of the Cdy Zn1−y O (y = 1 at%) thin film heterojunction such as ideality factor (η) and barrier height (ΦB ) were obtained using the thermionic emission theory as 2.53 and 0.70 eV, respectively. Cdy Zn1−y O (y = 1 at%) showed responsivity 0.01 A/W on 3.2 mW/cm2 exposure of UV light (365 nm) at 4 V bias voltage. The heterojunction so formed seems to be an excellent candidate to be used as an optical sensor (UV photodetector) in optoelectronics. [ABSTRACT FROM AUTHOR]- Published
- 2021
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