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In this paper, an effective method is proposed for improving the energy of the shock waves that are generated by plasma expanding outward and colliding with another gas. Silicon targets are used as the response medium with roughness of 2.3 nm, 457.8 nm, 1.1 µm, and 37.1 µm, respectively. A 532-nm-laser with a pulse duration of 8 ns and a repetition rate of 10 Hz is used as the irradiation source. An intensified charge-coupled device (ICCD) is used to photograph the morphology of the shock waves. The time-resolved emission images of silicon plasma plumes are observed between 20–200 ns. As the surface roughness of the target increases, the intensity of the shock wave gradually increases, and the energy of the shock wave reaches up to 39.45 mJ at a roughness of 37.1 µm.

In recent years, CsPbBrsub3/subquantum dots (QDs) have attracted much attention due to their bright prospects in solar cell studies. Dielectric properties are important for the fabrication of optoelectronic devices. Here, the dielectric properties of a CsPbBrsub3/subQD solution are investigated between 0.1 and 2.0 THz by terahertz time-domain spectroscopy. The measured frequency-dependent transmitted ratio is found to decrease from 0.96 to 0.80 in this range. By comparing different concentrations of the QD solution, the frequency-averaged absorption is linearly increased with the increase in QD concentration. After that, the frequency-dependent dielectric constant, including the complex refractive index, complex dielectric constant, and conductivity, is extracted by Fourier transform of the time-domain spectrum. An effective medium approach method is adopted to extract the complex dielectric constant of a CsPbBrsub3/subQD inclusion, and a slight peak around 0.4 THz is found in the imaginary part of the dielectric constant. The result of Drude-Lorentz fitting shows that the phonon plays a dominant role in the dielectric properties of a CsPbBrsub3/subQD solution. Moreover, the THz response of a CsPbBrsub3/subQD is found to be unchanged when the test is conducted under illumination. We attribute this phenomenon to the discrete energy level of excitons in CsPbBrsub3/subQDs due to quantum confinement, and design a comparative experiment to validate it. This study is significant for its deeper insight into the dielectric properties of CsPbBrsub3/subQDs, and thus is helpful through its applications in optoelectronics.

Owing to their unique physical properties, monolayer transition metal dichalcogenides (TMDCs) have been widely used in applications of light-emitting diodes (LEDs). However, monolayers of TMDCs undergo dramatic aging effects, including intense degradation in optical behavior, extensive cracking, and severe quenching of the direct gap photoluminescence (PL), seriously limiting the device performance. In this work, we show that monolayer WS

Owing to their unique physical properties, monolayer transition metal dichalcogenides (TMDCs) have been widely used in applications of light-emitting diodes (LEDs). However, monolayers of TMDCs undergo dramatic aging effects, including intense degradation in optical behavior, extensive cracking, and severe quenching of the direct gap photoluminescence (PL), seriously limiting the device performance. In this work, we show that monolayer WS2 stored for three months even in the glovebox exhibits obvious degenerative PL with changed peak position that can be attributed to the presence of a large number of trions induced by the aging effect. PC61BM surface processing was used to modify the surface of the aged monolayer WS2. As expected, higher uniformity in the PL spectrum was obtained. Besides, the PL peak wavelength was modified to be the same as that of the nonaged one and did not change even at higher excitation power. This strategy is shown to successfully suppress the formation of the trion by transferring the excess electrons from WS2 to PC61BM. The results demonstrate the feasibility of applying PC61BM surface modification to improve the performance of the LED based on monolayer WS2.