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Here, we present lattice dynamics associated with the local chemical bonding hierarchy in Zintl compound TlInTe2, which cause intriguing phonon excitations and strongly suppress the lattice thermal conductivity to an ultralow value (0.46–0.31 W m−1 K−1) in the 300–673 K. We established an intrinsic rattling nature in TlInTe2 by studying the local structure and phonon vibrations using synchrotron X‐ray pair distribution function (PDF) (100–503 K) and inelastic neutron scattering (INS) (5–450 K), respectively. We showed that while 1D chain of covalently bonded InTe2n-n transport heat with Debye type phonon excitation, ionically bonded Tl rattles with a frequency ca. 30 cm−1 inside distorted Thompson cage formed by InTe2n-n. This highly anharmonic Tl rattling causes strong phonon scattering and consequently phonon lifetime reduces to ultralow value of ca. 0.66(6) ps, resulting in ultralow thermal conductivity in TlInTe2. [ABSTRACT FROM AUTHOR]

The realization of n‐type Ge chalcogenides is elusive owing to intrinsic Ge vacancies that make them p‐type semiconductors. GeSe crystallizes into a layered orthorhombic structure similar to SnSe at ambient conditions. The high‐symmetry cubic phase of GeSe is predicted to be stabilized by applying 7 GPa external pressure or by enhancing the entropy by increasing to temperature to 920 K. Stabilization of the n‐type cubic phase of GeSe at ambient conditions was achieved by alloying with AgBiSe2 (30–50 mol %), enhancing the entropy through solid solution mixing. The interplay of positive and negative chemical pressure anomalously changes the band gap of GeSe with increasing the AgBiSe2 concentration. The band gap of n‐type cubic (GeSe)1−x(AgBiSe2)x (0.30≤x≤0.50) has a value in the 0.3–0.4 eV range, which is significantly lower than orthorhombic GeSe (1.1 eV). Cubic (GeSe)1−x(AgBiSe2)x exhibits an ultralow lattice thermal conductivity (κL≈0.43 W m−1 K−1) in the 300–723 K range. The low κL is attributed to significant phonon scattering by entropy‐driven enhanced solid‐solution point defects. [ABSTRACT FROM AUTHOR]