1. Light-induced effect in a-SixC1−xH films
- Author
-
T. Shimizu, Wang Hui-sheng, Zhang Fangging, Xu Xixiang, Chen Guang-Hua, and Wang Yin-Yue
- Subjects
Silanes ,Materials science ,business.industry ,Band gap ,Photoconductivity ,Analytical chemistry ,Conductance ,Activation energy ,Electronic structure ,chemistry.chemical_compound ,chemistry ,MOSFET ,Optoelectronics ,business ,Staebler–Wronski effect - Abstract
The paper presents the light‐induced effect of n‐ and p‐type GD a‐SixC1−x: H films by the use of MOSFET structure and coplanar contacts. It was found that, after prolonged light illumination, the gap state density increases and the photoconductance shows a slight decrease. The dark conductance of B state is related to EA (the A state activation energy).
- Published
- 1984