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Your search keyword '"Tsatsulnikov, A. F."' showing total 3 results
Start Over Author "Tsatsulnikov, A. F." Journal aip conference proceedings
3 results on '"Tsatsulnikov, A. F."'

2. Deep Green And Monolithic White LEDs Based On Combination Of Short-Period InGaN∕GaN Superlattice And InGaN QWs

Author

Tsatsulnikov, A. F., primary, Lundin, W. V., additional, Sakharov, A. V., additional, Zavarin, E. E., additional, Usov, S. O., additional, Nikolaev, A. E., additional, Kryzhanovskaya, N. V., additional, Chernyakov, A. E., additional, Zakgeim, A. L., additional, Cherkashin, N. A., additional, Hytch, M., additional, Ihm, Jisoon, additional, and Cheong, Hyeonsik, additional

Published
2011
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3. Optoelectronic structures with InAlN layers grown by MOVPE.

Author

Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Usov, S. O., Nikolaev, A. E., Troshkov, S. I., Yagovkina, M. A., Davydov, D. V., Cherkashin, N. A., Hytch, M. J., Hue, F., Brunkov, P. N., and Tsatsulnikov, A. F.

Subjects
OPTOELECTRONIC devices, ELECTRONIC structure, ALUMINUM nitride, INDIUM compounds, HETEROSTRUCTURES, METAL organic chemical vapor deposition, LIGHT emitting diodes, SEMICONDUCTORS
Abstract

The results of the some practical applications of InAlN layers in a device hetrostructures grown by MOVPE is presented. It is shown that use of InAlN allows not only create high-quality DBRs and HEMT structures, but also effectively modify properties of InAlN/GaN/InGaN light-emitting devices. [ABSTRACT FROM AUTHOR]

Published
2011
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