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In this particular piece of work, we have successfully synthesized a high-temperature lead-free Sb2O5 modified Bismuth Titanate (Bi4Ti3O12) polycrystalline solid solution using the conventional solid state route. The effect of Sb2O5 doping was investigated systematically for two different compositions (1.5 mol% and 3 mol%), and compared for their dielectric and ferroelectric properties with that of pure Bi4Ti3O12. The Sb2O5 added Bi4Ti3O12 compositions form non-stoichiometric oxygen-rich materials when introduced into the lattice and are expected to compensate for the oxygen deficiency of the pure compound, which is reflected in the significantly suppressed dielectric relaxations in the temperature-dependent dielectric permittivity responses. The room temperature ferroelectric study reveals an enhancement in remnant polarization in the Sb2O5 modified compositions. The 3 mol% Sb2O5 doped Bi4Ti3O12 showed promising characteristics for high temperature applications with increased dielectric constant (142 to 205 at 10kHz), decreased high temperature dielectric losses (1.33 to 0.02 at 10kHz at 300°C) and increased remnant polarization (2Pr = 0.6 to 7.75µC/cm2). [ABSTRACT FROM AUTHOR]

In this particular piece of work, we have successfully synthesized a high-temperature lead-free Sb2O5 modified Bismuth Titanate (Bi4Ti3O12) polycrystalline solid solution using the conventional solid state route. The effect of Sb2O5 doping was investigated systematically for two different compositions (1.5 mol% and 3 mol%), and compared for their dielectric and ferroelectric properties with that of pure Bi4Ti3O12. The Sb2O5 added Bi4Ti3O12 compositions form non-stoichiometric oxygen-rich materials when introduced into the lattice and are expected to compensate for the oxygen deficiency of the pure compound, which is reflected in the significantly suppressed dielectric relaxations in the temperature-dependent dielectric permittivity responses. The room temperature ferroelectric study reveals an enhancement in remnant polarization in the Sb2O5 modified compositions. The 3 mol% Sb2O5 doped Bi4Ti3O12 showed promising characteristics for high temperature applications with increased dielectric constant (142 to 205 at 10kHz), decreased high temperature dielectric losses (1.33 to 0.02 at 10kHz at 300°C) and increased remnant polarization (2Pr = 0.6 to 7.75µC/cm2). [ABSTRACT FROM AUTHOR]