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Your search keyword '"Jetter, M."' showing total 5 results
Start Over Author "Jetter, M." Journal aip conference proceedings
5 results on '"Jetter, M."'

3. Approaches for III/V Photonics on Si.

Author

Wiesner, M., Schulz, W.-M., Angelopoulos, E. A., Burghartz, J. N., Werner, J., Oehme, M., Schulze, J., Roßbach, R., Jetter, M., and Michler, P.

Subjects
SILICON, PHOTONICS, EPITAXY, GERMANIUM, SUBSTRATES (Materials science), MANUFACTURING processes, SEMICONDUCTORS
Abstract

We investigated different approaches to overcome difficulties in III/V-on-Si heteroepitaxy, namely growth on compliant substrates and virtual Ge substrates, both realized on top of Si substrates, and in addition, directly on Si. The prospect of this work was the realization of a light emitter on standard Si(100) substrate, capable of being integrated in established industrial processes. [ABSTRACT FROM AUTHOR]

Published
2011
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4. Influence of the Exciton Dark State on the Optical and Quantum Optical Properties of Single Quantum Dots.

Author

Reischle, M., Beirne, G. J., Roßbach, R., Jetter, M., and Michler, P.

Subjects
EXCITON theory, QUANTUM electronics, QUANTUM dots, AUTOCORRELATION (Statistics), LOW temperatures
Abstract

The optical properties of single InP/GaInP quantum dots are strongly affected by the dark exciton state. The exciton intensity and decay time are strongly reduced at low temperatures. Additionally, memory effects have been observed in second-order autocorrelation and cross-correlation measurements that last over several excitation cycles. This behavior has been simulated using a rate equation model. [ABSTRACT FROM AUTHOR]

Published
2010
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5. Electrically pumped single-photon emission up to 80 K—Towards a commercial single-photon emitting device.

Author

Reischle, M., Beirne, G. J., Schulz, W.-M., Eichfelder, M., Roßbach, R., Jetter, M., and Michler, P.

Subjects
QUANTUM dots, SEMICONDUCTORS, QUANTUM electronics, PHOTONS, ELECTRON optics
Abstract

We report electically pumped single-photon emission in the visible spectral range up to 80 K using InP quantum dots embedded in AlGaInP barriers. In order to confirm that the emission is from a single quantum dot we performed second-order autocorrelation measurements and observed strong antibunching at zero time delay. Deviations from a perfect single-photon emitter could be explained by detector limitations and background signal. [ABSTRACT FROM AUTHOR]

Published
2010
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