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For beyond 32 nm NMOS device fabrication, Cluster Carbon co-implantation process is experimentally evaluated. It is found that using Cluster Carbon co-implantation, instead of Ge PAI plus single Carbon co-implantation, Phosphorus (P) TED was suppressed and the junction depth Xj are reduced by 10 nm for SDE condition and by 17 nm for SD condition when the Cluster Carbon effective dose 2×1015/cm2. The sheet resistivity Rs of 280 Ω/sq for SDE condition is increased with the increment of the Carbon dose, but the Rs×Xj product 7156 Ω/sq·nm has a minimum value is confirmed. The difference of the Cluster Carbon co-implantation to the monomer Carbon implantation is evaluated and the Cluster Carbon PAI effect makes higher activation of the P dopnt after annealing. [ABSTRACT FROM AUTHOR]

Nissin's boron and carbon cluster ion implanter CLARIS G2 has been developed for the mass production of next generation CMOS devices. Development of boron cluster implant technique was presented at last IIT conference in 2008 [1]. In this paper, development of carbon cluster (C16Hx+ and C7Hx+) implant technique is described. Carbon cluster implantation has been well productized in terms of throughput, beam quality and lifetime. [ABSTRACT FROM AUTHOR]