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Your search keyword '"Freire, J."' showing total 6 results
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6 results on '"Freire, J."'

1. Stopping Power of Au for Ti Using Elastic Recoil Technique

Author

Linares, R., primary, Freire, J. A., additional, Ribas, R. V., additional, Medina, N. H., additional, Oliveira, J. R. B., additional, Seale, W. A., additional, Cybulska, E. W., additional, Wiedemann, K. T., additional, Allegro, P. R., additional, Toufen, D. L., additional, Guimaraes, Valdir, additional, Oliveira, José R. B., additional, Macario, Kita C. D., additional, and Genezini, Frederico A., additional

Published
2009
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4. Remarkably Strong Image Potential Effects in SrTiO3/Si and HfO2/Si Tunneling Structures.

Author

Pereira, T. A. S., Freire, J. A. K., Sousa, J. S., Freire, V. N., Farias, G. A., Scolfaro, L. M. R., Leite, J. R., and da Silva, E. F.

Subjects
*QUANTUM tunneling, *ELECTRONS, *SILICON, *STRONTIUM compounds, *HAFNIUM compounds, *ELECTRIC charge
Abstract

The contribution of the charge image to the tunneling properties of electrons through Si/SrTiO3/Si and Si/HfO2/Si single barriers is studied. It gives rise to a structure interfacing potential which blue shifts several meV the transmission resonance peaks. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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5. Stark Shift and Permanent Dipole Moment of Vertically Confined Excitons in InAs/GaAs Ring-Like Quantum Dots.

Author

Degani, M. H., Freire, J. A. K., Freire, V. N., and Farias, G. A.

Subjects
*QUANTUM dots, *MAGNETIC dipoles, *INDIUM arsenide, *GALLIUM arsenide, *STARK effect, *MOMENTUM transfer
Abstract

The purpose of this work is to present a theoretical study on Stark effect and permanent dipole moment of vertically confined excitons in ring-like quantum dots of InAs embedded in GaAs. Similarly to what is observed in dots, this system presents blue shift energy when an electric field is applied from the base to the top of the disk. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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6. Vapor-Phase Growth and Characterization of Luminescent Silicon Layers.

Author

de Vasconcelos, E. A., da Silva Jr., J. B., dos Santos, B. E. C. A., da Silva Jr., E. F., de Azevedo, W. M., Freire, J. A. K., Soares, J. A. N. T., and Leite, J. R.

Subjects
POROUS silicon, SEMICONDUCTORS, SILICON, ATOMIC force microscopy, PHYSICS
Abstract

We discuss the vapor-phase technique for porous silicon formation and the structural, optical and electrical properties of the layers with emphasis on the statistical and fractal analysis of Atomic Force Microscopy (AFM) images. First-order and second order parameters of different AFM images of vapor-phase grown layers were calculated. We found a trend towards slightly lower roughness exponents for vapor-phase samples, possibly related with improved structural reproducibility. The current-voltage characteristics show an exponential dependence with voltage, followed by a power-law relationship, typical of space charge limited currents in high resistivity materials. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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