1. 1/f-noise in thin aluminium films damaged by electromigration
- Author
-
C. Reuter, K. Dagge, J. Briggmann, Alfred Seeger, and Hermann Stoll
- Subjects
Materials science ,Metallurgy ,chemistry.chemical_element ,Electromigration ,Noise (electronics) ,Crystallographic defect ,chemistry ,Electrical resistance and conductance ,Aluminium ,Electrical resistivity and conductivity ,visual_art ,Aluminium alloy ,visual_art.visual_art_medium ,Thin film ,Composite material - Abstract
Electromigration damage in thin films of aluminium and aluminium alloy is detected by ac‐measurement of electrical noise. By avoiding defect production by electromigration during the measurement procedure, this technique allows us to study the effect of the electromigration pretreatment on the noise. During the damaging process the noise, which exhibit 1/f power spectra, increases in discrete steps, whereas the electrical resistance increases gradually. The stepwise increase in noise is attributed to the creation of highly mobile defects which do not contribute significantly to resistance. The first step recovers partially under reversal of the damaging current. A transient 1/f2‐component seen in the noise spectra after switching off the damaging current is caused by sudden jumps in the resistance that are presumably due to the relaxation of stress in the damaged metal films.
- Published
- 1996
- Full Text
- View/download PDF