1. Spin Relaxation in Wurtzite GaN: Valence Band Structure and Dislocation Effects
- Author
-
Christelle Brimont, Mathieu Gallart, Olivier Crégut, Bernd Hönerlage, Pierre Gilliot, Marília Caldas, and Nelson Studart
- Subjects
Condensed Matter::Materials Science ,chemistry.chemical_compound ,Materials science ,Condensed matter physics ,chemistry ,Exciton ,Gallium nitride ,Dislocation ,Electronic band structure ,Spin relaxation ,Excitation ,Wurtzite crystal structure ,Spin-½ - Abstract
We performed time‐ and polarization‐resolved pump‐and‐probe experiments on several differently strained GaN wurtzite epilayers.. Thanks to a selective spectral excitation of spin‐polarized A‐excitons at various temperatures and a fitting procedure considering the different A and B spin exciton states, we show that the Elliott‐Yafet mechanism is the dominant spin‐relaxation process. It origins from the high dislocation density in all of our GaN epilayers.
- Published
- 2010