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We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima in the photoresponse across the quantum wires. We interpret the results by optically induced holes in the valence band of the quantum well which shift the one-dimensional subbands of the quantum wire. Here we demonstrate that the effect persists up to a temperature of about 17 Kelvin. [ABSTRACT FROM AUTHOR]

Spins in semiconductor structures may allow for the realization of scalable quantum bit arrays, an essential component for quantum computation schemes. Specifically, hole spins may be more suited for this purpose than electron spins, due to their strongly reduced interaction with lattice nuclei, which limits spin coherence for electrons in quantum dots. Here, we present resonant spin amplification (RSA) measurements, performed on a p-modulation doped GaAs-based quantum well at temperatures below 500 mK. The RSA traces have a peculiar, butterfly-like shape, which stems from the initialization of a resident hole spin polarization by optical orientation. The combined dynamics of the optically oriented electron and hole spins are well-described by a rate equation model, and by comparison of experiment and model, hole spin dephasing times of more than 70 ns are extracted from the measured data. [ABSTRACT FROM AUTHOR]