1. Modeling and simulation of bulk gallium nitride power semiconductor devices
- Author
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Peter J. Parbrook, Miryam Arredondo-Arechavala, Gourab Sabui, and Z. J. Shen
- Subjects
Materials science ,III-V semiconductors ,Semiconductor device modeling ,General Physics and Astronomy ,Gallium nitride ,02 engineering and technology ,Physics and Astronomy(all) ,01 natural sciences ,Modeling and simulation ,Semiconductor device models ,chemistry.chemical_compound ,0103 physical sciences ,Diode ,010302 applied physics ,business.industry ,Wide-bandgap semiconductor ,Gallium compounds ,Power semiconductor diodes ,Semiconductor process simulation ,Semiconductor device ,021001 nanoscience & nanotechnology ,Wide band gap semiconductors ,lcsh:QC1-999 ,Electronic engineering computing ,chemistry ,Optoelectronics ,0210 nano-technology ,business ,Technology CAD (electronics) ,Technology CAD ,lcsh:Physics - Abstract
Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.
- Published
- 2016
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