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• CeBr 3 and NaI (Tl) scintillators characterized with array of Silicon Photomultipliers. • Energy resolution improves with lower shaping time and higher SiPM over-voltage. • Temperature dependency of gain of SiPM array: ∼−0.81 %/°C for overvoltage of 2.5 Volts. • Temperature dependency of light yield for CeBr 3 : ∼−0.27 %/°C for −31 °C to +26 °C. • Temperature dependency of light yield for NaI (Tl): ∼+0.5 %/°C for −31 °C to +26 °C. Interaction of X-rays with a scintillation detector produces optical photons in the visible range. The spectral and spatial information of the X-ray can be derived by detecting these output photons using a Silicon Photomultiplier (SiPM). Two types of detector modules: CeBr 3 and NaI (Tl), coupled with an array of SiPM are presented here, which are being developed for the future space exploration programs. The development of the front end electronics (FEE) for the charge readout from SiPM for X-ray spectrometer application is presented here which is characterized for SiPM's over-voltages and shaping amplifier's time constant. In this article, both the detector modules are subjected to a wide temperature range to establish a relationship of the SiPM's gain, energy resolution and scintillators' output photon yield with ambient temperature. The test results show that energy resolution improves with higher over-voltage of SiPM and also with lower operating temperature. The gain of the SiPM array shows negative temperature dependence of ∼−0.81 %/°C for an over-voltage of 2.5 Volts. To derive the temperature dependency of scintillators' output photons, gain of the SiPM array was made constant by operating it at a fixed over-voltage for a wide temperature range. With the constant gain of SiPM, CeBr 3 scintillator shows negative temperature coefficient of ∼−0.27 %/°C and NaI (Tl) shows positive temperature coefficient of ∼+0.5 %/°C for the light output in the temperature range of −31 °C to +26 °C. [ABSTRACT FROM AUTHOR]