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This paper presents the results of the dose dependencies of the light sum accumulation in ZnSe single crystals at a different X-ray excitation at 85 K. The values of light sum accumulation at different deep traps were determined from the thermally stimulated luminescence and conductivity curves. It was confirmed that the accumulated light sum is uniquely determined by the dose of radiation only, that is, the product of the intensity of excitation by the time of X-ray exposure. The same result is also given by the theoretical consideration of the kinetics of the light sum accumulation on deep traps for a multicenter model of crystal phosphors.

This work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of the conductivity kinetics at X-ray excitation showed that the value of maximum accumulated lightsum at deep traps does not depend on radiation intensity. However, regarding shallow and phosphorescent traps, the strength of accumulated lightsum depends on the intensity of exciting irradiation. Specifically, these shallow traps and phosphorescent traps cause the sublinear behavior of lux-ampere characteristics in the semiconductor material.