Search

The compositions, electrical properties and microstructures of zinc oxide ceramics with various 46.6ZnO-20Na2O-33.4P2O5 glass oxide additions prepared by solid-state method have been investigated. The structure of the materials is studied using X-Ray diffraction, and the microstructure is analyzed using scanning electron microscopy. The results indicated that the electrical properties were associated with the amount of 46.6ZnO-20Na2O-33.4P2O5 glass oxide additions and the sintering temperatures. The correlation between the microstructures, oxide additions and the sintering temperature was also discussed. From the results of electrical properties measurements, zinc oxide ceramics with various 46.6ZnO-20Na2O-33.4P2O5 glass oxide additions exhibits a good electrical behavior, which can be a suitable candidate material for electronic device applications.

Microwave dielectric properties of BaTi5O11 ceramics prepared by solid-state method with various calcining temperatures and sintering temperatures have been discussed. The εr value of 42.8, the Q×f value of 44,000 GHz, and the τf value of 42.4 ppm/oC were obtained for BaTi5O11 ceramics sintering at 1100oC for 4 h. BaTi5O11 is proposed as a suitable material candidate for application in high selective microwave ceramic passive components.

Microstructure, optical and electrical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O2) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O2 ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O2 ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr0.8Sn0.2)TiO2 films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10-9 A/cm2.

The microwave dielectric properties and microstructures of an Mg(Zr0.05Ti0.95)O3 ceramic system have been investigated. The compounds were prepared by the conventional solid-state route with various pressure conditions from 25 to 100 Kg/cm2 and sintered at 1420oC for 4 h. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy techniques. The Mg(Zr0.05Ti0.95)O3 had excellent dielectric properties: Q×f ~ 194,000 (GHz), εr ~ 17.9, and τf ~ -43 ppm/oC for the sample at 90 Kg/cm2.

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various annealing temperatures. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of annealed film were examined by scanning electron microscopy and atomic force microscopy. The dependence of the dielectric properties and microstructure characteristics on annealing temperature was also investigated.