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MAl2O4:Eu2+0.01, Dy3+0.02 (M=Ca, Sr and Ba) materials were synthesized by combustion method. X-ray powder diffraction (XRD) patterns indicate that all the samples are of high purity and crystallinity. The grain sizes of MAl2O4:Eu2+, Dy3+ are similar. The luminescent properties of phosphors were studied systematically. The main peaks of emission spectra of the luminescent phosphors changes from blue-purple to yellow-green and then to blue-green due to the different distortion existed in different host lattices. The decay time of phosphors varies a lot, and SrAl2O4:Eu2+, Dy3+ shows the best persistence characteristic. Thermoluminescence analysis indicates that the trap levels in MAl2O4:Eu2+, Dy3+ (M=Ca, Sr and Ba) are different, and the trap level in SrAl2O4 host is the most moderate to exhibit long afterglow at room temperature.

Nitrogen and Aluminum co-doped ZnO thin films were prepared by In Situ thermal oxidation of RF magnetron sputtered Zn3N2:Al films on quartz glasses. The structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance, photoluminescence (PL) and Hall effect measurements. XRD analyses revealed that Zn3N2:Al films entirely transformed into ZnO films after annealing in oxygen at 500 °C for one hour. Hall effect measurements confirmed p-type conduction in ZnO films with a low resistivity of 34.8Ω cm, a high hole concentration of 3.26×1017 cm-3 and a Hall mobility of 2.3 cm2/Vs. Optical transmission spectra shows that the films are highly transparent in the visible region . Our results demonstrate a promising approach to fabricate low resistivity p-type ZnO.

CrN films with deposition rates of 30-190 nm/min were deposited on Si (111) substrates by middle-frequency magnetron sputtering methods. XRD, SEM, EDS and microhardness tests were used to investigate the effects of bias voltages and total gas pressure on the structure and mechanical properties of the resulting CrN films. With the increasing of bias voltages and total gas pressure, the preferential diffraction orientation changed from (111) to (200). A smooth surface was observed by the SEM experiments and the thickness of the film was about 2 µm. The deposition rates and Cr content of resulting films were highly influenced by the magnitude of the bias voltage and total gas pressure. RMS and Ra properties of the CrN films increased when increased total gas pressure or decreased bias voltage. CrN films produced under optimal conditions have an almost 1:1 Cr:N ratio as determined by EDS. The hardness of the CrN film increased from 2200 to 2700 HV when increased the bias voltages from 0 to 200 V.