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In this paper, the deposition of pyrrone thin film materials by molecular layer deposition (MLD) is reported for the first time using pyromellitic dianhydride (PMDA) and 3,3'‐diaminobenzidine (DAB) as monomers, and ozone as a promoting precursor. Besides ozone, the effect of water, hydrogen peroxide, and oxygen is also tested to promote the growth of MLD thin films. Ozone as a strong oxidant is the best reactant in this process. Two precursor pulsing sequences are tested and both result in pyrrone films. With the DAB+O3+PMDA sequence, growth per cycle (GPC) of 1.2 Å is obtained at 250–300 °C, whereas with the DAB+PMDA+O3 sequence, GPC of 1.5 Å is obtained. When only DAB and O3 are used, indamine films with GPC of 1.0 Å are obtained. The films are characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, and atomic force microscopy. Chemical, thermal, and electrical properties of the films are also investigated. The films are stable in acidic and basic solutions and organic solvents, and they withstand 300 °C when annealed in air. [ABSTRACT FROM AUTHOR]

Abstract In this paper, the deposition of pyrrone thin film materials by molecular layer deposition (MLD) is reported for the first time using pyromellitic dianhydride (PMDA) and 3,3'‐diaminobenzidine (DAB) as monomers, and ozone as a promoting precursor. Besides ozone, the effect of water, hydrogen peroxide, and oxygen is also tested to promote the growth of MLD thin films. Ozone as a strong oxidant is the best reactant in this process. Two precursor pulsing sequences are tested and both result in pyrrone films. With the DAB+O3+PMDA sequence, growth per cycle (GPC) of 1.2 Å is obtained at 250–300 °C, whereas with the DAB+PMDA+O3 sequence, GPC of 1.5 Å is obtained. When only DAB and O3 are used, indamine films with GPC of 1.0 Å are obtained. The films are characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, and atomic force microscopy. Chemical, thermal, and electrical properties of the films are also investigated. The films are stable in acidic and basic solutions and organic solvents, and they withstand 300 °C when annealed in air.

Semiconductor devices have become smaller, more complicated, and structuralized in three dimensions. Area selective deposition is one of the promising bottom‐up process techniques for self‐alignment or improved overlay to achieve errorless alignment. The surface chemistry is crucial to adjust precursor adsorption. In this research, graphitic carbon fabricated by molecular layer deposition is utilized for inhibiting precursor adsorption. An indicone film, which has an indium‐based metalcone structure, is fabricated using bis(trimethysily)‐amidodiethylindium and hydroquinone. The structure of the indicone film is reconstructed to graphitic carbon with a small oxygen content on the surface by a thermal annealing process. The atomic structures of as‐dep and thermally‐annealed indicone films are analyzed. The organic structure is transformed to graphitic carbon above an annealing temperature of 450 °C, where indium is completely removed with annealing temperatures above 600 °C. The thermally‐annealed indicone is used for deactivating film growth, which can delay 60 cycles of ZnO growth (equivalent to a thickness of ≈11 nm). In addition, to energetically demonstrate precursor adsorption on graphitic carbon, the density functional theory is utilized. Finally, ZnO as a blocking layer is selectively deposited on a grated line pattern to interconnect the SiO2 line pattern by transferring a hard mask. [ABSTRACT FROM AUTHOR]

The deposition of polybenzimidazole (PBI)‐like thin films by molecular layer deposition is reported here for the first time using isophthalic acid (IPA) and 3,3′‐diaminobenzidine (DAB) as monomers and trimethylaluminum (TMA) as a linker precursor. Two precursor pulsing sequences are tested, the ABCB (TMA + IPA + DAB + IPA) and ABC (TMA + IPA + DAB) type MLD processes result in different types of PBI‐like films. With the ABCB sequence thin film growth per cycle (GPC) of 6.0 Å is obtained at 225–280 °C, whereas GPC of 7.0 Å is obtained with the ABC sequence. Films are characterized in detail by Fourier transform infrared spectroscopy, scanning electron microscopy, thermogravimetric analysis, time‐of‐flight elastic recoil detection analysis, and atomic force microscopy. The films have good thermal stability and withstand annealing at 400 °C in both air and nitrogen. PBI nanostructures are prepared by depositing PBI‐like film on electroblown polyvinylpyrrolidone fibers and removing the template fibers by annealing or dissolution into ethanol. [ABSTRACT FROM AUTHOR]

Inspired by recent successes in applying molecular layer deposition (MLD) to stabilize lithium-ion (Li-ion) electrodes, this review presents the MLD process and its outstanding attributes for electrochemical applications. The review discusses various MLD materials and their implementation in Li-ion electrodes. The rationale behind these emerging uses of MLD is examined to motivate future efforts on the fundamental understanding of interphase chemistry and the development of new materials for enhanced electrochemical performance. [ABSTRACT FROM AUTHOR]

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are vapor phase deposition techniques used to create conformal coatings with molecular-level control of thickness and composition. Recently, ALD and MLD have been extensively exploited to engineer the complex interfaces of dye-sensitized solar cells (DSSCs) and other molecularly functionalized photoelectrochemical devices to improve the performance and long-term stability. This progress report describes the recent advances in the applications of ALD and MLD for sensitized solar cells including DSSCs then discusses current challenges and future opportunities of ALD. [ABSTRACT FROM AUTHOR]

This work reports on the first thin‐film solid nanocomposite electrolyte (NCE) for lithium‐ion batteries made by combining two gas‐phase deposition techniques, molecular layer deposition (MLD) and atomic layer deposition (ALD). The advantage of using these techniques for the fabrication of NCEs comes from the ease of integration in thin‐film batteries and the possibility to alter the properties of the oxide matrix and of the Li‐compound independently. Moreover, the mesoporous oxide matrix based on an MLD and etching process, provides uniform interfaces with continuous conduction paths. An enhancement in Li‐ion conductivity of two orders of magnitude, compared to the pure Li‐compound, is obtained for an NCE consisting of a mesoporous Al2O3 matrix filled with Li2CO3. The impact of the oxide matrix on the resulting NCE Li‐ion conductivity is considerable, showing four orders of magnitude difference between silica and alumina. Finally, integration of the NCE in a thin‐film solid‐state battery stack utilizing a Li‐metal anode is demonstrated with good coulombic efficiency over a broad temperature range. The current findings and approach can expand the possibilities for development of novel thin‐film solid‐state electrolytes. [ABSTRACT FROM AUTHOR]

The cover page of the journal "Advanced Materials Interfaces" for November 7, 2016 issue is presented.