Search

Ferroelectric field-effect transistors (FeFETs) are one of the most interesting ferroelectric devices; however, they, usually suffer from low interface quality. The recently discovered 2D layered ferroelectric materials, combining with the advantages of van der Waals heterostructures (vdWHs), may be promising to fabricate high-quality FeFETs with atomically thin thickness. Here, dual-gated 2D ferroelectric vdWHs are constructed using MoS2 , hexagonal boron nitride (h-BN), and CuInP2 S6 (CIPS), which act as a high-performance nonvolatile memory and programmable rectifier. It is first noted that the insertion of h-BN and dual-gated coupling device configuration can significantly stabilize and effectively polarize ferroelectric CIPS. Through this design, the device shows a record-high performance with a large memory window, large on/off ratio (107 ), ultralow programming state current (10-13 A), and long-time endurance (104 s) as nonvolatile memory. As for programmable rectifier, a wide range of gate-tunable rectification behavior is observed. Moreover, the device exhibits a large rectification ratio (3 × 105 ) with stable retention under the programming state. This demonstrates the promising potential of ferroelectric vdWHs for new multifunctional ferroelectric devices.

In recent years, 2D layered materials have received considerable research interest on account of their substantial material systems and unique physicochemical properties. Among them, 2D layered transition metal dichalcogenides (TMDs), a star family member, have already been explored over the last few years and have exhibited excellent performance in electronics, catalysis, and other related fields. However, to fulfill the requirement for practical application, the batch production of 2D TMDs is essential. Recently, the chemical vapor deposition (CVD) technique was considered as an elegant alternative for successfully growing 2D TMDs and their heterostructures. The latest research advances in the controllable synthesis of 2D TMDs and related heterostructures/superlattices via the CVD approach are illustrated here. The controlled growth behavior, preparation strategies, and breakthroughs on the synthesis of new 2D TMDs and their heterostructures, as well as their unique physical phenomena, are also discussed. Recent progress on the application of CVD-grown 2D materials is revealed with particular attention to electronics/optoelectronic devices and catalysts. Finally, the challenges and future prospects are considered regarding the current development of 2D TMDs and related heterostructures.