1. Mimicking Neuroplasticity via Ion Migration in van der Waals Layered Copper Indium Thiophosphate
- Author
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Zheng Liu, Peng Meng, Guiming Cao, Qundong Fu, Chao Zhu, Wei Li, Changcun Li, Renji Bian, Qing Liu, Jiangang Chen, Jieqiong Chen, Jinyong Wang, Fucai Liu, Haishi Liu, School of Materials Science and Engineering, School of Electrical and Electronic Engineering, and CNRS International NTU THALES Research Alliances
- Subjects
Materials science ,chemistry.chemical_element ,Ionic bonding ,Nanotechnology ,Plasticity ,Indium ,Phosphates ,Ion ,chemistry.chemical_compound ,symbols.namesake ,General Materials Science ,Neurotransmitter ,Neuronal Plasticity ,Mechanical Engineering ,Materials::Microelectronics and semiconductor materials [Engineering] ,Ion Migration ,chemistry ,Neuromorphic engineering ,Mechanics of Materials ,Synaptic plasticity ,symbols ,Electrical and electronic engineering::Nanoelectronics [Engineering] ,van der Waals force ,Copper ,Copper Indium Thiophosphate - Abstract
Artificial synaptic devices are the essential components of neuromorphic computing systems, which are capable of parallel information storage and processing with high area and energy efficiencies, showing high promise in future storage systems and in-memory computing. Analogous to the diffusion of neurotransmitter between neurons, ion-migration-based synaptic devices are becoming promising for mimicking synaptic plasticity, though the precise control of ion migration is still challenging. Due to the unique 2D nature and highly anisotropic ionic transport properties, van der Waals layered materials are attractive for synaptic device applications. Here, utilizing the high conductivity from Cu+ -ion migration, a two-terminal artificial synaptic device based on layered copper indium thiophosphate is studied. By controlling the migration of Cu+ ions with an electric field, the device mimics various neuroplasticity functions, such as short-term plasticity, long-term plasticity, and spike-time-dependent plasticity. The Pavlovian conditioning and activity-dependent synaptic plasticity involved neural functions are also successfully emulated. These results show a promising opportunity to modulate ion migration in 2D materials through field-driven ionic processes, making the demonstrated synaptic device an intriguing candidate for future low-power neuromorphic applications. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version J.C. (Jiangang), C.Z., and G.C. contributed equally to this work. Z.L. acknowledges the support from National Research Foundation Singapore programme NRF-CRP21-2018-0007 and NRF-CRP22-2019-0007, Singapore Ministry of Education via AcRF Tier 3 Programme “Geometrical Quantum Materials” (MOE2018-T3-1-002), AcRF Tier 2 (MOE2016-T2-1-131), and AcRF Tier 1 RG4/17 and RG7/18. G.C. acknowledges the support from China Postdoctoral Science Foundation (2019M663463). P.M. acknowledges the support from Postdoctral Innovatiove Talent Supporting Program (BX20190060). F.L. acknowledges the support from the National Natural Science Foundation of China (62074025) and the National Key Research & Development Program (2020YFA0309200), the Applied Basic Research Program of Sichuan Province (2020ZYD014, 2021JDGD0026), and the Sichuan Province Key Laboratory of Display Science and Technology.
- Published
- 2021
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