1. Flexography‐Printed In 2 O 3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate
- Author
-
Ari Alastalo, Himadri S. Majumdar, Olli-Heikki Huttunen, and Jaakko Leppäniemi
- Subjects
Materials science ,Transistors, Electronic ,ta221 ,Gate dielectric ,thin-film transistor ,02 engineering and technology ,Substrate (printing) ,010402 general chemistry ,Indium ,01 natural sciences ,law.invention ,Atomic layer deposition ,law ,Flexography ,General Materials Science ,ta216 ,ta116 ,Mechanical Phenomena ,ta114 ,business.industry ,Mechanical Engineering ,Transistor ,Temperature ,metal oxide ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,flexographic printing ,Semiconductor ,Mechanics of Materials ,Thin-film transistor ,Printed electronics ,visual_art ,visual_art.visual_art_medium ,Printing ,Optoelectronics ,Ink ,printed electronics ,0210 nano-technology ,business ,Plastics - Abstract
Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.
- Published
- 2015