1. Intrinsic Detectivity Limits of Organic Near‐Infrared Photodetectors
- Author
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Donato Spoltore, Koen Vandewal, Christina Kaiser, Pieter Verstappen, Jonas Kublitski, Johannes Benduhn, Frederik Verstraeten, Paul Meredith, Ardalan Armin, Wouter Maes, Sam Gielen, Spoltore, Donato/0000-0002-2922-9293, Kublitski, Jonas/0000-0003-0558-9152, Gielen, Sam/0000-0002-9941-1453, GIELEN, Sam, Kaiser, Christina, VERSTRAETEN, Frederik, Kublitski, Jonas, Benduhn, Johannes, SPOLTORE, Donato, VERSTAPPEN, Pieter, MAES, Wouter, Meredith, Paul, Armin, Ardalan, and VANDEWAL, Koen
- Subjects
Materials science ,Photon ,Photodetector ,02 engineering and technology ,Photodetection ,Specific detectivity ,010402 general chemistry ,01 natural sciences ,Noise (electronics) ,near-infrared ,organics ,General Materials Science ,business.industry ,Mechanical Engineering ,non-radiative losses ,specific detectivity ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Organic semiconductor ,Mechanics of Materials ,Optoelectronics ,photodetectors ,0210 nano-technology ,business ,Voltage ,Dark current - Abstract
Organic photodetectors (OPDs) with a performance comparable to that of conventional inorganic ones have recently been demonstrated for the visible regime. However, near-infrared photodetection has proven to be challenging and, to date, the true potential of organic semiconductors in this spectral range (800-2500 nm) remains largely unexplored. In this work, it is shown that the main factor limiting the specific detectivity (D*) is non-radiative recombination, which is also known to be the main contributor to open-circuit voltage losses. The relation between open-circuit voltage, dark current, and noise current is demonstrated using four bulk-heterojunction devices based on narrow-gap donor polymers. Their maximum achievableD* is calculated alongside a large set of devices to demonstrate an intrinsic upper limit ofD* as a function of the optical gap. It is concluded that OPDs have the potential to be a useful technology up to 2000 nm, given that high external quantum efficiencies can be maintained at these low photon energies. Vandewal, K (corresponding author), UHasselt Hasselt Univ, Inst Mat Res IMO, Agoralaan 1,Bldg D, B-3590 Diepenbeek, Belgium ; IMEC, Associated Lab IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. Armin, A (corresponding author), Swansea Univ, Dept Phys, Singleton Pk, Swansea SA2 8PP, W Glam, Wales. ardalan.armin@swansea.ac.uk; koen.vandewal@uhasselt.be
- Published
- 2020
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