1. Electrical-Polarization-Induced Ultrahigh Responsivity Photodetectors Based on Graphene and Graphene Quantum Dots
- Author
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Chia-Wei Chiang, Golam Haider, Huan-Tsung Chang, Wei-Chun Tan, Chi-Te Liang, Yi-Rou Liou, Wei-Heng Shih, Prathik Roy, and Yang-Fang Chen
- Subjects
Photon ,Materials science ,Photodetector ,Nanotechnology ,02 engineering and technology ,010402 general chemistry ,Lead zirconate titanate ,01 natural sciences ,law.invention ,Biomaterials ,Responsivity ,chemistry.chemical_compound ,law ,Electric field ,Electrochemistry ,business.industry ,Graphene ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Graphene quantum dot ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,chemistry ,Quantum dot ,Optoelectronics ,0210 nano-technology ,business - Abstract
Hybrid quantum dot–graphene photodetectors have recently attracted substantial interest because of their remarkable performance and low power consumption. However, the performance of the device greatly depends on the interfacial states and photogenerated screening field. As a consequence, the sensitivity is limited and the response time is relatively slow. In order to circumvent these challenges, herein, a composite graphene and graphene quantum dot (GQD) photodetector on lead zirconate titanate (Pb(Zr0.2Ti0.8)O3) (PZT) substrates has been designed to form an ultrasensitive photodetector over a wide range of illumination power. Under 325 nm UV light illumination, the device shows sensitivity as high as 4.06 × 109 A W−1, which is 120 times higher than reported sensitivity of the same class of devices. Plant derived GQD has a broad range of absorptivity and is an excellent candidate for harvesting photons generating electron–hole pairs. Intrinsic electric field from PZT substrate separates photogenerated electron–hole pairs as well as provides the built-in electric field that causes the holes to transfer to the underlying graphene channel. The composite structure of graphene and GQD on PZT substrate therefore produces a simple, stable, and highly sensitive photodetector over a wide range of power with short response time, which shows a way to obtain high-performance optoelectronic devices.
- Published
- 2015
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