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Sensitive high‐energy photon detection from UV to X‐ray and high‐resolution array imaging are critical for medical diagnosis, space exploration, and scientific research. The key challenges for high‐performance photodetector and imaging arrays are the effective material and device design strategies for the miniaturization and integration of the device. Here, photon‐controlled diodes (i.e., the detector has rectifying characteristics only under light irradiation) are proposed for high‐resolution and anti‐crosstalk array imaging applications without integrating the switching element. Based on ultra‐wide bandgap semiconductor Ga2O3, the sensitive DUV/X‐ray photon‐controlled diodes are realized by the design of high‐resistance Ga2O3 film and high‐barrier contact. The device exhibits remarkable detection performance, including high photo‐responsivity (168 A W−1) and specific detectivity (1.45 × 1015 Jones) under DUV illumination, as well as a high sensitivity (1.23 × 105 µC Gyair−1 cm−2) under X‐ray light. Moreover, the low dark current and excellent rectification characteristics are obtained. Furthermore, its potential for high‐density and anti‐crosstalk array imaging applications is verified. These results not only bring forth new insights in the implementation of high‐performance DUV/X‐ray photodetector, but also pave a feasible way to realize high pixel density detector array through the simplified fabrication process for high‐resolution imaging applications. [ABSTRACT FROM AUTHOR]

Ga2O3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and the relatively slow response speed of the device have restricted the integration and application of Ga2O3 photodetectors. Herein, a narrow SiO2 barrier layer is introduced on the commercial SiC substrate, and a vertical photodetector is realized based on β‐Ga2O3/SiO2/SiC heterostructure with controllable tunneling effect by tailoring the band structure at the interface. The developed device exhibits unconventional rectification characteristics and photoresponse performance in different biasing modes owing to the controllable tunneling effect at the interface. In particular, the photodetector achieves a high responsivity (186.8 A W−1) under solar‐blind illumination at reverse bias, while exhibiting obvious advantages in dark current (3 pA), photo‐to‐dark current ratio (8.8 × 106), linear dynamic range (138.8 dB), and specific detectivity (1.4 × 1015 Jones) at forward bias. The photodetector also demonstrates excellent photoresponse stability after 6 months in air without encapsulation. In addition, an alternating biasing strategy, inspired by its bidirectional operability, is proposed to suppress the persistent photoconductivity effect and increase the decay speed by 1.23 × 105 times. This work provides a referable strategy for the further development of high‐performance Ga2O3‐based photoelectronics. [ABSTRACT FROM AUTHOR]