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Perovskite films prepared by the solution process usually result in irregular grain orientation and rich buried interface defects, hindering the further improvement of device performance. Herein, multi‐fluorine‐containing C60‐ and C70 (higher fullerene)‐porphyrin derivatives, F60PD and F70PD, are synthesized and pre‐buried to modify the SnO2/perovskite heterointerface. The F70PD modification layer provides a better perovskite quality and more effective electron transporting capability compared to the corresponding F60PD, with the F70PD being more effective in regulating the perovskite growth, passivating the buried interface defects, and optimizing the interface energy level alignment. Consequently, the F70PD‐based device delivers superior efficiency and stability than the control and F60PD‐based devices. The F70PD‐based device yields a champion efficiency of 24.09% with negligible hysteresis. Meanwhile, due to the increased activation energy of ion migration, the F70PD‐based device maintains 80% of its initial efficiency after operating at the maximum power point for 1620 h. This study highlights the potential of designing higher fullerene materials for buried interface to further improve the perovskite solar cells' performance. [ABSTRACT FROM AUTHOR]

Designing functional fullerenes with roles beyond defect passivation and electron‐transporting for perovskite solar cells (PSCs) is essential to the development of fullerenes and PSCs. Here, the authors design and synthesize a functional fullerene, FPD, composed of a C60 cage, a porphyrin ring, and three pentafluorophenyl groups. The structure features of FPD enable it can form chemical interactions with the perovskite lattices. These interactions enhance the defect passivation effect and prevent the decomposition of perovskite under irradiation. As a result, the FPD‐based device yields an improved power conversion efficiency of 23% with substantially enhanced operational stability (T80 > 1500 h). Furthermore, once got damaged, the FPD can prevent lead leakage by forming a stable and water‐insoluble complex (FPD‐Pb). Their findings provide a novel strategy to achieve high‐performance and eco‐friendly PSCs with functional fullerene materials. [ABSTRACT FROM AUTHOR]

The under‐coordinated defects within perovskite and its relevant interfaces always attract and trap the free carriers via the electrostatic force, significantly limiting the charge extraction efficiency and the intrinsic stability of perovskite solar cells (PSCs). Herein, self‐diffusion interfacial doping by using ionic potassium L‐aspartate (PL‐A) is first reported to restrain the carrier trap induced recombination via the reconstruction of energy level structure at SnO2/perovskite interface in conventional n‐i‐p structured PSCs. Experiments and theories are consistent with the PL‐A anions that can remain at the SnO2 surface due to strong chemical adsorption. During the spin‐coating of the perovskite film, the cations gradually diffuse into perovskite and endow an n‐doping effect, which provides higher force and a better energy level alignment for the carrier transport. As a result, they obtained 23.74% power conversion efficiency for the PL‐A modified small‐area devices, with dramatically improved open‐circuit voltage of 1.19 V. The corresponding large‐area devices (1.05 cm2) achieved an efficiency of 22.23%. Furthermore, the modified devices exhibited negligible hysteresis and enhanced ambient air stability exceeding 1500 h. [ABSTRACT FROM AUTHOR]